MX29LA321M H/L
32M-BIT SINGLE VOLTAGE 3V ONLY
UNIFORM SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• Configuration
- 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector structure
- 64KB(32KW) x 64
• Latch-up protected to 250mA from -1V to VCC + 1V
• Low VCC write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
PERFORMANCE
• High Performance
- Fast access time: 70R/90ns
- Page read time: 25ns
- Sector erase time: 0.5s (typ.)
- 4 word/8 byte page read buffer
- 16 word/ 32 byte write buffer: reduces programming
time for multiple-word/byte updates
• Low Power Consumption
- Active read current: 18mA(typ.)
- Active write current: 20mA(typ.)
- Standby current: 20uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-year data retention
SOFTWARE FEATURES
• Supports Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Program Suspend/Program Resume
- Suspend program operation to read other sectors
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data/pro-
gram other sectors
• Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of all
sectors, regardless of sector protection settings
- ACC (high voltage) accelerates programming time
for higher throughput during system
SECURITY
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotect function to allow code
changes
• Sector Permanent Lock
- Through a unique permanent locking scheme, the
device allows the user to permanently lock any ran-
domly selected sector(s) within the memory array
(Please contact Macronix for specifics relating to
this feature - this datasheet does not include any
other information relating to this feature)
• Secured Silicon Sector
- Provides a 128-word OTP area for permanent, se-
cure identification
- Can be programmed and locked at factory or by cus-
tomer
PACKAGE
• 56-pin TSOP
• 64-ball CSP
•
All Pb-free devices are RoHS Compliant
GENERAL DESCRIPTION
The MX29LA321M H/L is a 32-mega bit Flash memory
organized as 4M bytes of 8 bits or 2M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LA321M H/L is packaged in 56-pin TSOP and
64-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29LA321M H/L offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LA321M H/L has separate chip enable
REV. 1.0, FEB. 27, 2006
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MX29LA321M H/L
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LA321M H/L uses a command register to manage
this functionality.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and programming operations produces reliable
cycling. The MX29LA321M H/L uses a 2.7V to 3.6V
VCC supply to perform the High Reliability Erase and
auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pins from -1V to VCC + 1V.
fication of electrical erase are controlled internally within
the device.
AUTOMATIC SECTOR ERASE
The MX29LA321M H/L is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically programs
the specified sector(s) prior to electrical erase. The tim-
ing and verification of electrical erase are controlled inter-
nally within the device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29LA321M H/L
electrically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC PROGRAMMING
The MX29LA321M H/L is byte/word/page programmable
using the Automatic Programming algorithm. The Auto-
matic Programming algorithm does not require the exter-
nal system to have a time-out sequence nor verification
of the data programmed.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including 2
unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program
verification, and counts the number of sequences. A sta-
tus bit similar to DATA# polling and a status bit toggling
between consecutive read cycles, provide feedback to
the user as to the status of the programming operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm. The
Automatic Erase algorithm automatically programs the
entire array prior to electrical erase. The timing and veri-
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