MX29F040TC-55 datasheet, PDF - EEWORLD Datasheet

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MX29F040TC-55: Description4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY; Categorystorage storage; File Size599KB，40 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX29F040TC-55 Overview

4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

MX29F040TC-55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	55 ns
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	8
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Department size	64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	8 mm
Base Number Matches	1

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MX29F040

4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

FEATURES

• 524,288 x 8 only

• Single power supply operation

- 5.0V only operation for read, erase and program op-

eration

• Fast access time: 55/70/90/120ns

• Low power consumption

- 30mA maximum active current(5MHz)

- 1uA typical standby current

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase

8 equal sectors of 64K-Byte each

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from, or

program data to, another sector that is not being

erased, then resumes the erase.

Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

Sector protect/unprotect for 5V only system or 5V/

12V system.

Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

100,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Low VCC write inhibit is equal to or less than 3.2V

Package type:

- 32-pin PLCC, TSOP or PDIP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

20 years data retention

•

GENERAL DESCRIPTION

The MX29F040 is a 4-mega bit Flash memory organized

as 512K bytes of 8 bits. MXIC's Flash memories offer

the most cost-effective and reliable read/write non-vola-

tile random access memory. The MX29F040 is pack-

aged in 32-pin PLCC, TSOP, PDIP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29F040 offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F040 has separate chip enable (CE) and output

enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F040 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

The MX29F040 uses a 5.0V±10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

P/N:PM0538

REV. 2.3, DEC. 10, 2004

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