DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5550; 2N5551
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 23
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 160 V).
APPLICATIONS
•
Switching and amplification in high voltage applications
such as telephony.
1
handbook, halfpage
2N5550; 2N5551
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
2
3
1
2
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
2N5550
2N5551
V
CEO
collector-emitter voltage
2N5550
2N5551
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
140
160
6
300
600
100
630
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
160
180
V
V
MIN.
MAX.
UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
2N5550; 2N5551
VALUE
200
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
2N5550
collector cut-off current
2N5551
I
EBO
h
FE
emitter cut-off current
DC current gain
2N5550
2N5551
DC current gain
2N5550
2N5551
DC current gain
2N5550
2N5551
V
CEsat
collector-emitter saturation voltage
collector-emitter saturation voltage
2N5550
2N5551
V
BEsat
C
c
C
e
f
T
F
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
2N5550
2N5551
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
−
−
−
−
−
−
100
−
−
250
200
1
1
6
30
300
10
8
mV
mV
V
V
pF
pF
MHz
dB
dB
I
C
= 50 mA; V
CE
= 5 V; see Fig.2
20
30
−
−
−
150
mV
I
C
= 10 mA; V
CE
= 5 V; see Fig.2
60
80
250
250
I
E
= 0; V
CB
= 120 V
I
E
= 0; V
CB
= 120 V; T
amb
= 100
°C
I
C
= 0; V
EB
= 4 V
I
C
= 1 mA; V
CE
= 5 V; see Fig.2
60
80
−
−
−
−
−
50
50
50
nA
µA
nA
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 100 V
I
E
= 0; V
CB
= 100 V; T
amb
= 100
°C
−
−
100
100
nA
µA
CONDITIONS
MIN.
MAX.
UNIT
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
handbook, full pagewidth
160
MGD814
hFE
120
VCE = 5 V
80
40
0
10
−1
1
10
10
2
IC mA
10
3
Fig.2 DC current gain; typical values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
2N5550; 2N5551
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
1999 Apr 23
5
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