<IGBT Modules>
CM225DX-34T/CM225DXP-34T
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
C
.............…..................…
Maximum junction temperature T
v j m a x
.........
DX
●Flat base type
●Copper base plate (Nickel-plating)
●RoHS Directive compliant
●Tin-plating pin terminals
Collector current I
C
.............…..................…
Maximum junction temperature T
v j m a x
.........
DXP
●Flat base type
●Copper base plate (Nickel-plating)
●RoHS Directive compliant
●Tin-plating pressfit terminals
dual switch (half-bridge)
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
●V
CEsat
selection for parallel connection
INTERNAL CONNECTION
9
8
225
A
1 7 5
°C
Collector-emitter voltage V
CES
..................
1 7 0 0
V
225
A
1 7 5
°C
Collector-emitter voltage V
CES
..................
1 7 0 0
V
●UL Recognized under UL1557, File No. E323585
TERMINAL CODE
1.
2.
3.
4.
5.
TH1
TH2
G1
Es1
Cs1
6.
7.
8.
9.
10.
11.
C2E1
C2E1
G2
Es2
E2
C1
10
Tr2
Di1
Di2
7
11
NTC
Tr1
6
Th
1
2
3
4
5
COM.
MOUNTING HOLES
SECTION A
Publication Date : November 2017
CMH-11652
Ver.1.0
1
<IGBT Modules>
CM225DX-34T/CM225DXP-34T
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING
DX
Dimension in mm
TERMINAL
Tolerance otherwise specified
Division of Dimension
0.5
over
over
over
3
6
30
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
to 120
to 400
over 120
Publication Date : November 2017
CMH-11652
Ver.1.0
2
<IGBT Modules>
CM225DX-34T/CM225DXP-34T
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING
Dimension in mm
TERMINAL
DXP
PCB DRILL HOLE PATTERN
Tolerance otherwise specified
Division of Dimension
0.5
over
over
over
3
6
30
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
to 120
to 400
over 120
Publication Date : November 2017
CMH-11652
Ver.1.0
3
<IGBT Modules>
CM225DX-34T/CM225DXP-34T
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (T
vj
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
Symbol
V
CES
V
GES
I
C
I
CRM
P
t ot
I
E
(Note1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, T
C
=104 °C
Pulse, Repetitive
T
C
=25 °C
DC
(Note2)
(Note3)
(Note2, 4)
(Note2, 4)
(Note3)
Conditions
Rating
1700
± 20
225
450
1440
225
450
Unit
V
V
A
W
A
I
ERM (Note1)
Pulse, Repetitive
Item
MODULE
Symbol
V
isol
T
v jmax
T
Cmax
T
v jop
T
st g
Isolation voltage
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Conditions
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Instantaneous event (overload)
(Note4)
Rating
4000
175
125
-40 ~ +150
-40 ~ +125
Unit
V
°C
°C
Continuous operation (under switching)
-
ELECTRICAL CHARACTERISTICS (T
vj
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
Symbol
I
CES
I
GES
V
G E (t h )
V
C E sa t
(Terminal)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=22.5 mA, V
CE
=10 V
I
C
=225 A, V
GE
=15 V,
Refer to the figure of test circuit
(Note5)
Limits
Min.
-
-
5.4
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
(Note4)
Typ.
-
-
6.0
2.00
2.40
2.50
1.95
2.35
2.45
-
-
-
1.76
-
-
-
-
2.70
2.90
2.90
2.65
2.75
2.75
-
10.2
51.5
56.4
29.0
0.94
3.3
Max.
1.0
0.5
6.6
2.40
-
-
2.35
-
-
60
1.6
0.5
-
800
200
800
600
3.30
-
-
3.25
-
-
300
-
-
-
-
-
-
Unit
mA
μA
V
V
Collector-emitter saturation voltage
V
C E sa t
(Chip)
I
C
=225 A,
V
GE
=15 V,
(Note5)
V
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC (Note1)
(Terminal)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
CC
=1000 V, I
C
=225 A, V
GE
=15 V
V
CC
=1000 V, I
C
=225 A, V
GE
=±15 V,
R
G
=0 Ω, Inductive load
I
E
=225 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
V
CE
=10 V, G-E short-circuited
nF
μC
ns
V
Emitter-collector voltage
V
EC (Note1)
(Chip)
I
E
=225 A,
G-E short-circuited,
(Note5)
V
ns
μC
mJ
mJ
mΩ
Ω
t
rr
Q
rr
E
on
E
of f
E
rr
r
g
(Note1)
(Note1)
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
V
CC
=1000 V, I
E
=225 A, V
GE
=±15 V,
R
G
=0 Ω, Inductive load
V
CC
=1000 V, I
C
=I
E
=225 A,
V
GE
=±15 V, R
G
=0 Ω, T
v j
=150 °C,
Inductive load
Main terminals-chip, per switch, T
C
=25 °C
Per switch
(Note1)
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
R
CC'+EE'
-
-
Publication Date : November 2017
CMH-11652
Ver.1.0
4
<IGBT Modules>
CM225DX-34T/CM225DXP-34T
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
vj
=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
R
25
ΔR/R
B
(25/50)
P
25
Item
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
T
C
=25 °C
(Note4)
(Note4)
(Note6)
Conditions
Limits
Min.
4.85
-7.3
-
-
Typ.
5.00
-
3375
-
Max.
5.15
+7.8
-
10
Unit
kΩ
%
K
mW
R
100
=493 Ω, T
C
=100 °C
Approximate by equation
T
C
=25 °C
(Note4)
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
t h(j -c)Q
R
t h(j -c)D
R
t h(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to case, per Inverter IGBT
(Note4)
(Note4)
Limits
Min.
-
(Note4, 7)
Typ.
-
-
11.5
3.1
Max.
104
176
-
-
Unit
K/kW
K/kW
Junction to case, per Inverter FWD
Case to heat sink,
Thermal grease applied
per 1 module,
PC-TIM applied
(Note4, 8)
-
-
-
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
Mounting torque
Mounting torque
Item
Main terminals
Mounting to heat sink
Solder pin type (DX)
d
s
Creepage distance
Pressfit pin type (DXP)
Solder pin type (DX)
d
a
Clearance
Pressfit pin type (DXP)
e
c
m
Flatness of base plate
mass
On the centerline X, Y
-
(Note9)
Conditions
M 6 screw
M 5 screw
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
Limits
Min.
3.5
2.5
17
18.1
17
18.6
10
16.2
10
16.2
±0
-
Typ.
4.0
3.0
-
-
-
-
-
-
-
-
-
300
Max.
4.5
3.5
-
-
-
-
-
-
-
-
+200
-
Unit
N·m
N·m
mm
mm
mm
mm
μm
g
*: This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).
2. Junction temperature (T
v j
) should not increase beyond T
v j m a x
rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T
v j
) dose not exceed T
v j m a x
rating.
4. Case temperature (T
C
) and heat sink temperature (T
S
) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.
Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
R
25
1
1
) /(
)
6.
B
(
25
/
50
)
½
ln(
R
50
T
25
T
50
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K)/D
(C-S)
=50 μm.
8. Typical value is measured by using PC-TIM of λ=3.4 W/(m·K)/D
(C-S)
=50 μm.
9. The base plate (mounting side) flatness measurement points (X, Y) are shown in the following figure.
-:Concave
Mounting side
+:Convex
-:Concave
+:Convex
2 mm
Y
X
Mounting side
Mounting side
2 mm
Publication Date : November 2017
CMH-11652
Ver.1.0
5
京公网安备 11010802033920号
EEWORLD
