2N5551 datasheet, PDF - EEWORLD Datasheet

2N5551: Description600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; Categorysemiconductor Discrete semiconductor; File Size130KB，2 Pages; ManufacturerSEMTECH; Websitehttp://www.semtech.com

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600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.6000 A
Maximum Collector-Emitter Voltage	160 V
state	DISCONTINUED
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Maximum ambient power consumption	0.6250 W
Transistor type	Universal small signal
Minimum DC amplification factor	30
Rated crossover frequency	100 MHz

	2N5551	2N5550	HN5551	HN5550
Description	600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	NPN high-voltage transistors	NPN high-voltage transistors	NPN high-voltage transistors

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