MX26LV160
Macronix NBit
TM
Memory Family
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY BOOT SECTOR HIGH SPEED eLiteFlash
TM
MEMORY
FEATURES
• Extended single - supply voltage range 3.0V to 3.6V
• 2,097,152 x 8 / 1,048,576 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte/word Programming (55us/70us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase verify capability.
- Automatically program and verify data at specified
address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV160 is a 16-mega bit high speed Flash
memory organized as 2M bytes of 8 bits or 1M words of
16 bits. MXIC's high speed Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX26LV160 is packaged
in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is de-
signed to be reprogrammed and erased in system or in
standard EPROM programmers.
The standard MX26LV160 offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX26LV160 has separate chip enable (CE#) and output
enable (OE#) controls.
MXIC's high speed Flash memories augment EPROM
functionality with in-circuit electrical erasure and program-
ming. The MX26LV160 uses a command register to
manage this functionality. The command register allows
for 100% TTL level control inputs and fixed power sup-
ply levels during erase and programming, while main-
taining maximum EPROM compatibility.
MXIC high speed Flash technology reliably stores
memory contents even after 2,000 erase and program
cycles. The MXIC cell is designed to optimize the erase
and programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low in-
ternal electric fields for erase and program operations
produces reliable cycling. The MX26LV160 uses a
3.0V~3.6V VCC supply to perform the High Reliability
Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM1090
REV. 1.0, NOV. 08, 2004
1
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
