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CAT22C10W-20TE13

Description
Non-Volatile SRAM, 64X4, 200ns, CMOS, PDSO16, LEAD AND HALOGEN FREE, SOIC-16
Categorystorage    storage   
File Size69KB,10 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Environmental Compliance
Download Datasheet Parametric View All

CAT22C10W-20TE13 Overview

Non-Volatile SRAM, 64X4, 200ns, CMOS, PDSO16, LEAD AND HALOGEN FREE, SOIC-16

CAT22C10W-20TE13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCatalyst
Parts packaging codeSOIC
package instructionSOP, SOP16,.4
Contacts16
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum access time200 ns
JESD-30 codeR-PDSO-G16
JESD-609 codee3
length10.3 mm
memory density256 bit
Memory IC TypeNON-VOLATILE SRAM
memory width4
Humidity sensitivity level1
Number of functions1
Number of terminals16
word count64 words
character code64
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64X4
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP16,.4
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height2.65 mm
Maximum standby current0.00003 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width7.5 mm
Base Number Matches1
CAT22C10
256-Bit Nonvolatile CMOS Static RAM
FEATURES
s
Single 5V Supply
s
Fast RAM Access Times:
H
GEN
FR
ALO
EE
LE
s
Low CMOS Power Consumption:
A
D
F
R
E
E
TM
–200ns
–300ns
s
Infinite EEPROM to RAM Recall
s
CMOS and TTL Compatible I/O
s
Power Up/Down Protection
s
100,000 Program/Erase Cycles (E
2
PROM)
–Active: 40mA Max.
–Standby: 30
µ
A Max.
s
JEDEC Standard Pinouts:
–18-pin DIP
–16-pin SOIC
s
10 Year Data Retention
s
Commercial, Industrial and Automotive
Temperature Ranges
s
"Green" Package Options Available
DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
EEPROM array which allows for easy transfer of data
from RAM array to EEPROM (STORE) and from
EEPROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5µs. The CAT22C10 features unlimited
RAM write operations either through external RAM
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when V
CC
is less than 3.0V.
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (EEPROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-pin plastic DIP and 16-
pin SOIC packages.
PIN CONFIGURATION
DIP Package (P, L)
SOIC Package (J, W)
A4
A3
A2
A1
A0
CS
Vss
STORE
PIN FUNCTIONS
Pin Name
A
0
–A
5
Function
Address
Data In/Out
Write Enable
Chip Select
Recall
Store
+5V
Ground
No Connect
NC
A4
A3
A2
A1
A0
CS
Vss
STORE
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
Vcc
NC
A5
I/O3
I/O2
I/O1
I/O0
WE
RECALL
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Vcc
A5
I/O4
I/O3
I/O2
I/O1
WE
RECALL
I/O
0
–I/O
3
WE
CS
RECALL
STORE
V
CC
V
SS
NC
© Catalyst Semiconductor, Inc., Patent Pending
Characteristics subject to change without notice
1
Doc. No. 1082, Rev. O
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