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BSH102T/R

Description
TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size79KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BSH102T/R Overview

TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

BSH102T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.85 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH102
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b
1997 Dec 08

BSH102T/R Related Products

BSH102T/R BSH102/T3 BSH102
Description TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain current (ID) 0.85 A 0.85 A 0.85 A
Maximum drain-source on-resistance 0.4 Ω 0.4 Ω 0.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker NXP - NXP
Base Number Matches 1 1 -
Contacts - 3 3
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