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BUZ64

Description
Power Field-Effect Transistor, 11.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size30KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUZ64 Overview

Power Field-Effect Transistor, 11.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

BUZ64 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)670 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)11.5 A
Maximum drain current (ID)11.5 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)46 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

BUZ64 Related Products

BUZ64 BUZ94
Description Power Field-Effect Transistor, 11.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 7.8A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Reach Compliance Code unknown not_compliant
Shell connection DRAIN DRAIN
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 400 V 600 V
Maximum drain current (Abs) (ID) 11.5 A 7.8 A
Maximum drain current (ID) 11.5 A 7.8 A
Maximum drain-source on-resistance 0.4 Ω 0.9 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
Maximum pulsed drain current (IDM) 46 A 31 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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