BAV302T/R13 datasheet, PDF - EEWORLD Datasheet

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BAV302T/R13: DescriptionRectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, ROHS COMPLIANT, GLASS, MICROMELF-2; CategoryDiscrete semiconductor diode; File Size80KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAV302T/R13 Overview

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, ROHS COMPLIANT, GLASS, MICROMELF-2

BAV302T/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	compliant
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.3 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BAV301~BAV303

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES

VOLTAGE

120 to 250 Volts

POWER

300 mWatts

MICRO-MELF

Unit : inch (mm)

FEATURES

• Fast switching Speed.

• Surface Mount Package Ideally Suited For Automatic Insertion.

• Silicon Epitaxal Planar Construction.

• In compliance with EU RoHS 2002/95/EC directives

.040(1.0)

.048(1.2)DIA.

MECHANICAL DATA

• Case: Micro Melf, Glass

• Terminals: Solderable per MIL-STD-202E, Method 208

• Polarity: Cathode Band

• Marking: Cathode Band Only

• Weight: 0.01 grams

• Packing information

T/R - 2.5K per 7" plastic Reel

.043(1.1)

.008(0.2)

.079(2.0)

.071(1.8)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25°C unless otherwise noted)

PA RA M E TE R

R e ve r s e V o l t a g e

P e a k R e ve r s e V o l t a g e

R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h

R e s i s t i ve L o a d a nd f > = 5 0 H z

P e a k F o r w a r d S ur g e C ur r e nt , t = 1 0 0 0 m s

P o w e r D i s s i p a t i o n D e r a t e A b o ve a t 2 5

M a x i m u m F o r w a r d V o l t a g e , I

= 1 0 0 m A

M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng

Vo lt a g e T

= 2 5

Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )

M a xi m um R e ve r s e R e c o ve r y ( N o t e 2 )

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i o n J u n c t i o n S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

F S M

J A

S T G

B AV 3 0 1

100

120

B AV 3 0 2

150

200

1 .0

300

1 .0

0 .1

3 .0

350

-6 5 to +1 7 5

B AV 3 0 3

200

250

U N IT S

C / W

NOTE:

1. CJ at V

=0, f=1MHZ

2. From I

=10mA to I

=-1mA, V

=6Volts, R

=100Ω

STAD-JAN.08.2009

PAGE . 1

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