ARS50GB0G datasheet, PDF - EEWORLD Datasheet

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ARS50GB0G: DescriptionRectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size359KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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ARS50GB0G Overview

Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,

ARS50GB0G Parametric

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
package instruction	O-PEDB-N2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	800 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-50 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	5 µA
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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ARS50A thru ARS50M

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Diffused junction

- Low leakage

- High surge capability

- Low cost construction utilizing void-free molded plastic technique

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

High Current Button Rectifiers

MECHANICAL DATA

Case:

ARS

Molding compound, UL flammability classification rating 94V-0

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Weight:

1.68 g (approximately)

ARS

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

@ 50 A

Maximum reverse current @ Rated VR T

=25

=125

Typical reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical Thermal Resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Reverse Recovery Time Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

SYMBOL

RRM

RMS

F(AV)

FSM

trr

θJC

STG

ARS

50A

ARS

50B

100

ARS

50D

200

140

200

ARS

50G

400

280

400

800

1.1

250

300

- 50 to +175

ARS

50J

600

420

600

ARS

50K

800

560

800

ARS

50M

1000

700

1000

UNIT

μA

μs

C/W

Document Number: DS_D1409053

Version: E14

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Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
package instruction	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Maximum non-repetitive peak forward current	800 A	800 A	800 A	800 A	800 A	800 A	800 A	800 A	800 A	800 A
Number of components	1	1	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	400 V	400 V	100 V	100 V	600 V	600 V	800 V	800 V	50 V	50 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END	END	END	END	END

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