MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF284/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN–PCS/cellular radio
and wireless local loop.
•
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = –29 dBc
•
Typical Single–Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF284R1
MRF284SR1
2000 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF284R1
CASE 360C–05, STYLE 1
NI–360S
MRF284SR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
±20
87.5
0.5
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1.0
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 11
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF284R1 MRF284SR1
1
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 200 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1.0 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
FUNCTIONAL TESTS
(in Motorola Test Fixture, 50 ohm system)
Common–Source Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)
G
ps
9
10.5
—
dB
C
iss
C
oss
C
rss
—
—
—
43
23
1.4
—
—
—
pF
pF
pF
V
GS(th)
V
GS(q)
V
DS(on)
g
fs
2.0
3.0
—
—
3.0
4.0
0.3
1.5
4.0
5.0
0.6
—
Vdc
Vdc
Vdc
S
Symbol
Min
Typ
Max
Unit
η
30
35
—
%
IMD
—
–32
–29
dBc
IRL
—
–15
–9
dB
G
ps
9
10.4
—
dB
η
—
35
—
%
IMD
—
–34
—
dBc
IRL
—
–15
–9
dB
G
ps
8.5
9.5
—
dB
η
35
45
—
%
Ψ
No Degradation In Output Power
MRF284R1 MRF284SR1
2
MOTOROLA RF DEVICE DATA
V
GG
+
R1
W1
C3
C4
R2
B1
R3
B2
R5
B3
R6
W2
C12
R7
W3
C14
+
+
V
DD
C6
R4
C7
C15
C13
C17
C18
L1
Z10
Z1
Z2
C1
Z3
C2
C5
Z4
Z5
Z6
Z7
C8
Z8
C9
DUT
Z9
C10
Z11
Z12
Z13
C11
L2
Z14
Z15
C16
Z16
L3
Z17
RF
OUTPUT
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.530″ x 0.080″ Microstrip
0.255″ x 0.080″ Microstrip
0.600″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.015″ x 0.325″ Microstrip
0.085″ x 0.325″ Microstrip
0.165″ x 0.325″ Microstrip
0.110″ x 0.515″ Microstrip
0.095″ x 0.515″ Microstrip
0.050″ x 0.515″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Raw Board
Material
0.155″ x 0.515″ Microstrip
0.120″ x 0.325″ Microstrip
0.150″ x 0.325″ Microstrip
0.010″ x 0.325″ Microstrip
0.505″ x 0.080″ Microstrip
0.865″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.030″ Glass Teflon
, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300–55–22,
ε
r
= 2.55
Figure 1. 1.93–2.0 GHz Broadband Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF284R1 MRF284SR1
3
Table 1. 1.93 – 2.0 GHz Broadband Test Circuit Component Designations and Values
Designators
B1 – B3
C1, C2, C8
C3, C17
C4, C14
C5
C6, C12
C7, C13
C9
C10
C11
C15, C16
C18
L1, L2
L3
R1, R2, R3, R5, R6, R7
R4
W1, W2, W3
WS1, WS2
Description
Ferrite Beads, Round, Ferroxcube #56–590–65–3B
0.8–8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL
22
mF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
0.1
mF
Chip Capacitors, Kemet #CDR33BX104AKWS
220 pF Chip Capacitor, B Case, ATC #100B221KP500X
1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X
5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X
1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X
2.7 pF Chip Capacitor, B Case, ATC #100B2R7CCA500X
0.6–4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL
200 pF Chip Capacitors, B Case, ATC #100B201KP500X
10
mF,
35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T–5
2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T–5
12
Ω,
1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
Solid Copper Buss Wire, 16 AWG
Berrylium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni–Spectra #3052–1648–10
4–40 Ph Head Screws, 0.125″ Long
4–40 Ph Head Screws, 0.188″ Long
4–40 Ph Head Screws, 0.312″ Long
4–40 Ph Rec. Hd. Screws, 0.438″ Long
RF Circuit Board
3″ x 5″ Copper Clad PCB, Glass Teflon
MRF284R1 MRF284SR1
4
MOTOROLA RF DEVICE DATA
C4
R1
W1
B1
B2
C7
L1
C5
R2
C6
C12
W2
C14
W3
R7
C17
R6
R3
R4
B3
R5
C13
C9
WS1
C10
WS2
L2
C15
C16
C3
C18
L3
C1
C2
C8
C11
MRF284
Rev–0
Figure 2. 1.93–2.0 GHz Broadband Test Circuit Component Layout
MRF284
Rev–0
(Scale 1:1)
Figure 3. MRF284 Test Circuit Photomaster
(Reduced 18% in printed data book, DL110/D)
MOTOROLA RF DEVICE DATA
MRF284R1 MRF284SR1
5
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