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LT2A03-T

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

LT2A03-T Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15,

LT2A03-T Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
LT2A01 - LT2A07
2.0A RECTIFIER
Features
·
·
·
·
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 70A Peak
Plastic Material - UL Flammability
Classification 94V-0
A
B
A
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.4 grams (approx)
Mounting Position: Any
Marking: Type Number
DO-15
Dim
A
B
C
D
Min
25.40
5.50
0.686
2.60
D
C
Max
7.62
0.889
3.6
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 55°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
@ I
F
= 2.0A
@T
A
= 25°C
@ TA = 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
I
2
t
C
j
R
qJA
T
j,
T
STG
LT2
A01
50
35
@ T
A
= 25°C unless otherwise specified
LT2
A02
100
70
LT2
A03
200
140
LT2
A04
400
280
2.0
70
1.1
5.0
50
17.5
15
60
-65 to +150
LT2
A05
600
420
LT2
A06
800
560
LT2
A07
1000
700
Unit
V
V
A
A
V
µA
A
2
s
pF
K/W
°C
Notes:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
DS29008 Rev. A-2
1 of 2
LT2A01-LT2A07

LT2A03-T Related Products

LT2A03-T
Description Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15,
Maker Diodes Incorporated
package instruction O-PALF-W2
Reach Compliance Code unknown
ECCN code EAR99
Is Samacsys N
application GENERAL PURPOSE
Shell connection ISOLATED
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JEDEC-95 code DO-15
JESD-30 code O-PALF-W2
Maximum non-repetitive peak forward current 70 A
Number of components 1
Phase 1
Number of terminals 2
Maximum output current 2 A
Package body material PLASTIC/EPOXY
Package shape ROUND
Package form LONG FORM
Certification status Not Qualified
Maximum repetitive peak reverse voltage 200 V
surface mount NO
Terminal form WIRE
Terminal location AXIAL
Base Number Matches 1

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