VISHAY
LL1.5 to LL5.1
Vishay Semiconductors
Voltage Stabilizers
Features
• Silicon Planar Stabilizer Diodes
• Monolithic integrated analog circuits in MiniMELF
case, designed for small power stabilizer and limi-
tation circuits, providing low dynamic resistance
and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
• The end of the device marked with the cathode
ring is to be connected: LL1.5 and LL2 to the neg-
ative pole of the supply voltage; LL2.4 thru LL5.1
to the positive pole of the supply voltage
• These diodes are also available in DO-35 case
with the type designation ZTE1.5 - ZTE 5.1.
17205
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 50 mg
Cathode band color:
Blue
Packaging codes/options:
D1 / 10k per 13 " reel (8 mm tape), 20k/box
D2 / 2.5k per 7 " reel (8 mm tape), 20k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Operating Current (see Table
"Characteristics")
Inverse Current
Power dissipation
Junction temperature
Storage temperature range
T
A
= 25 °C
I
F
P
tot
T
J
T
S
100
300
1)
150
- 55 to + 150
mA
mW
°C
°C
Test condition
Symbol
Value
Unit
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Temperature Coefficient of the
stabilized voltage
Test condition
I
Z
= 5 mA
Symbol
α
VZ
α
VZ
α
VZ
α
VZ
Thermal resistance junction to
ambient air
R
θJA
400
1)
Value
Unit
10
-4
/°C
10
-4
/°C
10
-4
/°C
10
-4
/°C
°C/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
I
F
= 10 mA
Symbol
V
F
Min
Typ.
Max
1.1
Unit
V
Document Number 85814
Rev. 2, 15-Jul-03
www.vishay.com
1
LL1.5 to LL5.1
Vishay Semiconductors
Electrical Characteristics
Partnumber
Operating Voltage
V
Z
@ I
Z
= 5 mA
(2)
V
min
LL1.5
LL2
LL2.4
LL2.7
LL3
LL3.3
LL3.6
LL3.9
LL4.3
LL4.7
LL5.1
(1)
(2)
VISHAY
Dynamic Resistance
r
zj
@ I
Z
= 5 mA
Ω
max
1.55
2.3
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
13(<20)
18(<30)
14(<20)
15(<20)
15(<20)
16(<20)
16(<25)
17(<25)
17(<25)
18(<25)
18(<25)
Permissable operating
current
I
Z
@ T
amb
= 25 °C
mA
max
120
120
120
105
95
90
80
75
65
60
55
1.35
2
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Tested with pulses t
p
= 5 ms
LL1.5
LL2 2.4 2.7 3.0 3.3 3.6 3.9
4.3
4.7
5.1
18200
Figure 1. Breakdown Characteristics
www.vishay.com
2
Document Number 85814
Rev. 2, 15-Jul-03
VISHAY
LL1.5 to LL5.1
Vishay Semiconductors
LL1.5
LL2 2.4 2.7 3 3.3 3.6 3.9
4.3
4.7
5.1
18201
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
LL
5.1
4.3
3.6
3
18202
18203
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Dynamic resistance vs. operating current, normalized
Document Number 85814
Rev. 2, 15-Jul-03
www.vishay.com
3
Sensor
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