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MUR3020PT

Description
15 A, 200 V, SILICON, RECTIFIER DIODE, TO-218AC
CategoryDiscrete semiconductor    diode   
File Size28KB,3 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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MUR3020PT Overview

15 A, 200 V, SILICON, RECTIFIER DIODE, TO-218AC

MUR3020PT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
package instructionR-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current100 µA
Maximum reverse recovery time0.035 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
S E M I C O N D U C T O R
MUR3010PT, RURH1510CC,
MUR3015PT, RURH1515CC,
MUR3020PT, RURH1520CC
15A, 100V - 200V Ultrafast Dual Diodes
Package
JEDEC TO-218AC
April 1995
Features
• Ultrafast with Soft Recovery Characteristic
(t
RR
< 30ns)
• +175
o
C Rated Junction Temperature
• Reverse Voltage Up to 200V
• Avalanche Energy Rated
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
CATHODE
(FLANGE)
ANODE1
CATHODE
ANODE2
Description
MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC,
RURH1515CC, RURH1520CC are ultrafast dual diodes
(t
RR
< 30ns) with soft recovery characteristics. They have a low
forward voltage drop and are of planar, silicon nitride passivated,
ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/ clamping
diodes and rectifiers in a variety of switching power supplies and
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristics minimizes
ringing and electrical noise in many power switching circuits thus
reducing power loss in the switching transistor.
PACKAGING AVAILABILITY
PART NUMBER
MUR3010PT
RURH1510CC
MUR3015PT
RURH1515CC
MUR3020PT
RURH1520CC
PACKAGE
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-218AC
BRAND
MUR3010PT
RURH1510C
MUR3015PT
RURH1515C
MUR3020PT
RURH1520C
A1
A2
Symbol
K
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C
MUR3010PT
RURH1510CC
100V
100V
MUR3015PT
RURH1515CC
150V
150V
150V
15A
30A
200A
-55
o
C to +175
o
C
MUR3020PT
RUR1520CC
200V
200V
200V
15A
30A
200A
-55
o
C to +175
o
C
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
100V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
15A
o
C)
(Total device forward current at rated V
R
and T
C
= 150
Peak Forward Repetitive Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
30A
(Rated V
R
, square wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
200A
(Surge applied at rated load condition halfwave 1phase 60Hz)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-55
o
C to +175
o
C
Copyright
©
Harris Corporation 1995
6-12
File Number
2775.4

MUR3020PT Related Products

MUR3020PT MUR3015PT MUR3010PT RURH1515CC RURH1510CC RURH1520CC
Description 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-218AC 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 15 A, 150 V, SILICON, RECTIFIER DIODE 15 A, 100 V, SILICON, RECTIFIER DIODE 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-218AC
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
package instruction R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Reach Compliance Code unknow unknow unknown unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 15 A 15 A 15 A 15 A 15 A 15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 150 V 100 V 150 V 100 V 200 V
Maximum reverse current 100 µA 100 µA 100 µA 100 µA 100 µA 100 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maker Harris Harris Harris Harris Harris -
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