RFMD’s SXE-1089Z is a high performance pHEMT MMIC amplifier utilizing
a patented self-bias Darlington topology housed in a lowcost, surface
mountable SOT-89 package. The active bias network provides stable cur-
rent over temperature and process thereshold voltage variations.
Designed to run directly from a 5V supply, the SXE-1089Z does not require
a dropping resistor as compared to typical Darlington amplifiers. The SXE-
1089Z product is designed for high linearity 5V gain block applications
that require small size and minimal external components. It is internally
Optimum Technology
matched to 50Ω.
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
(dB)
10.0
Note: Measured with Bias tees and deembedded to lead of device
0.0
20.0
Features
Excellent ACP -65dBc with 9.5dBm
Channel Power at 2140MHz
OIP
3
=38.5dBm at 2140MHz
P
1dB
=22.6dBm at 2140MHz
Gain=11.7dB at 1960MHz
NF=3.2dB at 1960MHz
Single-Supply Operation:5V at
I
DQ
=128mA
Broadband Internal Matching, No
Dropping Resistor
Patented Self-Bias Darlington
Topology
Consistent Current versus Temper-
ature
S
22
-20.0
S
11
-30.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Gain and Return Loss
T = 25°C
S
21
SiGe HBT
-10.0
Insensitive to Process Threshold
Voltage Variation
Applications
PA Driver Amplifier, Multi-Carrier
Applications
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Frequency (GHz)
Parameter
Small Signal Gain
Min.
9.6
Specification
Typ.
14.2
11.7
11.1
22.4
22.9
22.2
38.0
38.5
38.6
13.2
17.0
9.5
Max.
12.6
Condition
880MHz
1960MHz
2140MHz
880MHz
1960MHz
2140MHz
880MHz, 5dBm per tone, 1MHz spacing,
1960MHz, 5dBm per tone, 1MHz spacing,
2140MHz, 5dBm per tone, 1MHz spacing,
880MHz, -65dBc ACP, tested with 9 Channels
FWD
880MHz, -45dBc ACP
2140MHz, -65dBc ACP, tested with 64 Channels
FWD
2140MHz, -45dBc ACP
2140MHz
2140MHz
2140MHz
Output Power at 1dB Compression
20.7
Output Third Order Intercept Point
36.6
IS-95 Channel Power
WCDMA Channel Power
14.5
dBm
Input Return Loss
16.0
20.0
dB
Output Return Loss
11.7
15.7
dB
Noise Figure
3.2
4.2
dB
Device Operating Voltage
5.0
V
Device Operating Current
118
128
138
mA
Thermal Resistance
45.0
°C/W
junction - lead
Test Conditions: V
D
=5V, I
DQ
=128mA Typ. , T
L
=25°C, Z
S
=Z
L
=50Ω, Tested with Broadband Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
京公网安备 11010802033920号
EEWORLD
