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M93S56-DW1T

Description
128X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.169 INCH, PLASTIC, TSSOP-8
Categorystorage    storage   
File Size163KB,23 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M93S56-DW1T Overview

128X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.169 INCH, PLASTIC, TSSOP-8

M93S56-DW1T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.169 INCH, PLASTIC, TSSOP-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Maximum clock frequency (fCLK)1 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee0
length4.4 mm
memory density2048 bit
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count128 words
character code128
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128X16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height1.1 mm
Serial bus typeMICROWIRE
Maximum standby current0.00005 A
Maximum slew rate0.0015 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3 mm
Maximum write cycle time (tWC)10 ms
write protectHARDWARE/SOFTWARE
Base Number Matches1
M93S66, M93S56, M93S46
4K/2K/1K (x16) Serial Microwire Bus EEPROM
with Block Protection
INDUSTRY STANDARD MICROWIRE BUS
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SINGLE ORGANIZATION by WORD (x16)
WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for M93Sx6 version
– 2.5V to 5.5V for M93Sx6-W version
– 1.8V to 3.6V for M93Sx6-R version
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 words)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD and LATCH-UP
PERFORMANCES
DESCRIPTION
This M93S46/S56/S66 specification covers a
range of 4K/2K/1K bit serial EEPROM products
respectively. In this text, products are referred to as
M93Sx6. The M93Sx6 is an Electrically Erasable
Programmable Memory (EEPROM) fabricated with
STMicroelectronics’s High Endurance Single
Polysilicon CMOS technology.
Table 1. Signal Names
S
D
Q
C
PRE
W
V
CC
V
SS
Chip Select Input
Serial Data Input
Serial Data Output
Serial Clock
Protect Enable
Write Enable
Supply Voltage
Ground
8
1
PSDIP8 (BN)
0.25mm Frame
8
1
SO8 (MN)
150mil Width
8
1
TSSOP8 (DW)
169mil Width
Figure 1. Logic Diagram
VCC
D
C
S
PRE
W
M93Sx6
Q
VSS
AI02020
February 1999
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