numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
57A
di
/
dt
≤
700A/µs
VR
≤400V
TJ
≤
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
PDM
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
050-5850 Rev A
3-2006
0.001
10
-5
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
10
Typical Performance Curves
100
I
D
, DRAIN CURRENT (AMPERES)
APT40M70B2_LVFR(G)
100
I
D
, DRAIN CURRENT (AMPERES)
VGS=6V, 7V, 10V & 15V
VGS=15V
VGS=10V
VGS=6V & 7V
5.5V
80
5.5V
60
5V
40
4.5V
4V
0
0
50
100
150
200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
TJ = +25°C
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
5V
40
4.5V
4V
0
0
2
4
6
8
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
20
20
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
I
D
, DRAIN CURRENT (AMPERES)
1.8
V
GS
80
1.6
60
1.4
VGS=10V
VGS=20V
40
TJ = +125°C
TJ = +25°C
TJ = -55°C
1.2
20
1.0
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
60
I
D
, DRAIN CURRENT (AMPERES)
0
0.8
0
40
80
120
160
200
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
1.15
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
50
40
30
20
10
0
1.10
1.05
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
0.90
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
2.5
I
D
= 0.5 I
V
GS
D
[Cont.]
= 10V
2.0
1.5
1.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-5850 Rev A
3-2006
APT40M70B2_LVFR(G)
300
I
D
, DRAIN CURRENT (AMPERES)
100
50
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
30,000
10,000
C, CAPACITANCE (pF)
Ciss
1mS
10
5
10mS
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
5,000
Coss
1,000
500
Crss
1
.5
.1
1
5 10
50 100
400
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
100
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
200
100
50
TJ =+150°C
TJ =+25°C
16
VDS=80V
VDS=200V
VDS=320V
12
8
10
5
4
100
200
300
400
500
600
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
T-MAX
TM
(B2) Package Outline (B2VFR)
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline (LVFR)
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
3-2006
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
050-5850 Rev A
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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