TRANSISTOR,MOSFET,ARRAY,P-CHANNEL,200V V(BR)DSS,15MA I(D),CHIP / DIE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Microchip |
| Reach Compliance Code | not_compliant |
| Is Samacsys | N |
| Other features | GATE PROTECTED |
| Configuration | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 0.015 A |
| Maximum drain-source on-resistance | 600 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 3.2 pF |
| JESD-30 code | S-XUUC-N16 |
| JESD-609 code | e0 |
| Number of components | 8 |
| Number of terminals | 16 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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