Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BDT65C
DESCRIPTION
·With
TO-220C package
·High
DC Current Gain
·DARLINGTON
·Complement
to type BDT64C
APPLICATIONS
·For
audio output stages and general
purpose amplifier and switching
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
120
5
12
125
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
V
F-1
V
F-2
C
C
t
on
t
off
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Forward diode voltage
Forward diode voltage
Collector capacitance
Turn-on time
I
C
=5A ,I
Bon
=-I
Boff
=20mA
Turn-off time
6.0
CONDITIONS
I
C
=30mA, I
B
=0
I
C
=5A ,I
B
=20mA
I
C
=10A ,I
B
=100mA
I
C
=5A ; V
CE
=4V
V
CB
=120V, I
E
=0
V
CB
=60V, I
E
=0;T
j
=150℃
V
CE
=60V, I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=5A ; V
CE
=4V
I
C
=12A ; V
CE
=4V
I
F
=5A
I
F
=12A
I
E
=0 ; V
CB
=10V;f=1MHz
2.0
200
1.0
1000
1000
1500
MIN
120
TYP.
BDT65C
MAX
UNIT
V
2.0
3.0
2.5
0.4
2.0
0.2
5
V
V
V
mA
mA
mA
2.0
V
V
pF
2.5
10
μs
μs
2
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