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BDT65CF

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size110KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BDT65CF Overview

Transistor

BDT65CF Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
12A
·High
DC Current Gain-h
FE
= 1000(Min)@ I
C
= 5A
·Complement
to Type BDT64F/AF/BF/CF
APPLICATIONS
·Designed
for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDT65F
Collector-Emitter
Voltage
BDT65AF
BDT65BF
BDT65CF
BDT65F
Collector-Emitter
Voltage
BDT65AF
BDT65BF
BDT65CF
V
EBO
I
C
I
CM
I
B
B
BDT65F/AF/BF/CF
VALUE
60
80
UNIT
V
CER
V
100
120
60
80
V
100
120
5
12
20
0.5
39
150
-65~150
V
A
A
A
W
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
5.7
UNIT
℃/W
isc Website:www.iscsemi.cn

BDT65CF Related Products

BDT65CF BDT65BF BDT65AF BDT65F
Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknown unknown unknown unknown
Base Number Matches 1 1 1 1
Maker Inchange Semiconductor Inchange Semiconductor Inchange Semiconductor -
Is Samacsys N N N -
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