BRIGHT LED ELECTRONICS CORP.
BIR-BM13J4G-2-LC13.5
END-LOOK PACKAGE
LIGHT EMITTING DIODE
Features:
1. High radiant power and high radiant intensity.
2. Standard T-1 3/4(5mm)package.
3. Peak wavelength
λp=940nm.
4. Good spectral matching to si-photodetector.
5. Radiant angle: 30
°
6. Lens Appearance: Water Clear.
7. This product doesn't contain restriction
substance, comply RoHS standard
Package Dimensions:
Anode
Cathode
1.0(.040)
Cathode
13.5(0.531)±0.5
Applications:
1. Remote Control.
2. Automatic Control System.
NOTES:
2.54(0.100) NOM
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
*1
*1
Symbol
Pd
I
F
I
FP
V
R
Topr
Tstg
Rating
150
100
1.0
5
-40℃~85℃
-45℃~85℃
Unit
mW
mA
A
V
-
-
（300pps
10us pulse）
Ver:1.0
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1
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BRIGHT LED ELECTRONICS CORP.
BIR-BM13J4G-2-LC13.5
Optical- Electrical Characteristics
(@T
A
=25
℃
)
Parameter
Symbol
Test Conditions
Min
TYP
Max
Unit
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Line Half- Width
Viewing Angle
Ie
V
F
I
R
λ
p
I
F
=50mA
I
F
=50mA
V
R
=5V
I
F
=50mA
I
F
=50mA
I
F
=20mA
13.81
-
-
-
-
-
35
1.25
-
940
50
30
-
1.5
100
-
-
-
mW/sr
V
μA
nm
nm
deg
Δ
λ
2θ
1/2
Typical Optical-Electrical Characteristic Curves
Fig.1 Spectral Dlstrbution
1.0
Relative Radiant Intensity
Forward Current IF (mA)
120
100
80
60
40
20
0
Fig.2 Forward Current Vs
Ambient Temperature
0.5
0 840
(mA)
100
80
Forward Current
940
Wavelength
(nm)
1040
-40 -20 0
20 40 60 80 100
Ambient Temperature
Fig.4 Relative Radiant Intensity
Vs Ambient Tembeb Ature
Fig.3 Forward Current Vs
Output Power To Value @50mA
3.0
2.5
2.0
1.5
1.0
0.5
0
60
40
20
0
0
1.0
2.0
3.0
4.0
(V)
Forward Voltage
Fig.5 Relative Radiant Intensity
Vs Forward Current
-40
-20 0
Ambient Temperature
20
40
60
80
(° C)
FIG.6 Radiant Diagram
0
10
20
30
2.0
Output Power Relative To
Value At @ 50mA
Relative Radiant Intensity
1.0
1.0
0.9
0.8
0.7
40
50
60
70
80
90
0.5
0.3
0.1
0.2
0.4 0.6
0
0
20
40
60
80 100
(mA)
Forward Current
Ver:1.0
Page
2
of 5
BRIGHT LED ELECTRONICS CORP.
BIR-BM13J4G-2-LC13.5
●
Dip Soldering
300
TEMPERATURE( °C)
250
200
150
100
50
30
10
20
30
Fluxing
Preheat
Max:260℃,5sec.
Suggest:2~3sec.
40
50
60
70
80
90
100
110
120
TIME(sec.)
1. Please avoid any external stress applied to the lead-frames and
epoxy while the LEDs are at high temperature,especially during soldering
2. DIP soldering and hand soldering should not be done more than one time.
3. After soldering, avoid the epoxy lens from mechanical shock or
vibration until the LEDs are back to room temerature.
4. Avoid rapid cooling during temperature ramp-down process
5. Although the soldering condition is recommended above,
soldering at the lowest possible temperature is feasible for the LEDs
●
IRON
Soldering
300℃ Within 3 sec.,One time only.
Ver:1.0
Page
3
of 5
BRIGHT LED ELECTRONICS CORP.
BIR-BM13J4G-2-LC13.5
Tapping and packaging specifications(Units:
mm)
Packaging Bag Dimensions
Notes:
1
、
500pcs per bag, 5Kpcs per box.
2
、
All dimensions are in millimeters(inches).
3
、
Specifications are subject to change without notice.
Ver:1.0
Page
4
of 5
BRIGHT LED ELECTRONICS CORP.
BIR-BM13J4G-2-LC13.5
Infrared Emitting Diode Specification
Commodity: Infrared emitting diode
Intensity Bin Limits (At 50mA)
BIN CODE
12
13
14
15
16
Min.(mW/sr)
13.81
19.42
27.20
38.08
53.31
Max.( (mW/sr)
19.42
27.20
38.08
53.31
74.63
N O T E S : To l e r a n c e o f m e a s u r e m e n t o f
Radiant Intensity
:
±15%
Ver:1.0
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5
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