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HN1C03FU-A(TE85L,F)

Description
TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),TSOP
CategoryDiscrete semiconductor    The transistor   
File Size287KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

HN1C03FU-A(TE85L,F) Overview

TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),TSOP

HN1C03FU-A(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)0.3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
HN1C03FU
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
HN1C03FU
For Muting and Switching Applications
Including two devices in US6 (ultra super mini type with 6 leads)
High emitter-base voltage: V
EBO
= 25V (min)
High reverse h
FE
: reverse h
FE
= 150 (typ.)(V
CE
=−2V, I
C
=−4mA)
Low on resistance: R
ON
= 1Ω (typ.)(I
B
= 5mA)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
50
20
25
300
60
200
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
2-2J1A
Weight: 6.8 mg (typ.)
*
Total rating
1
2010-09-27

HN1C03FU-A(TE85L,F) Related Products

HN1C03FU-A(TE85L,F) HN1C03FU-B(TE85L,F)
Description TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),TSOP TRANSISTOR,BJT,NPN,20V V(BR)CEO,300MA I(C),TSOP
Is it Rohs certified? conform to conform to
Maker Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown
Is Samacsys N N
Maximum collector current (IC) 0.3 A 0.3 A
Configuration Single Single
Minimum DC current gain (hFE) 200 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W
surface mount YES YES
Base Number Matches 1 1

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