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1N4448T-80

Description
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35,
CategoryDiscrete semiconductor    diode   
File Size141KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

1N4448T-80 Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35,

1N4448T-80 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee1
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature10
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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