DPS256S8BN-55C datasheet, PDF - EEWORLD Datasheet

DPS256S8BN-55C: DescriptionSRAM Module, 256KX8, 55ns, CMOS, CDMA32, SIDE BRAZED, CERAMIC PACKAGE-32; Categorystorage storage; File Size131KB，6 Pages; ManufacturerTwilight Technology Inc.

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DPS256S8BN-55C Overview

SRAM Module, 256KX8, 55ns, CMOS, CDMA32, SIDE BRAZED, CERAMIC PACKAGE-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Is Samacsys	N
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T32
memory density	2097152 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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