CBR4M-L060TIN/LEAD datasheet, PDF

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CBR4M-L060TIN/LEAD: DescriptionBridge Rectifier Diode, 4A, 600V V(RRM),; CategoryDiscrete semiconductor diode; File Size474KB，2 Pages; ManufacturerCentral Semiconductor

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CBR4M-L060TIN/LEAD Overview

Bridge Rectifier Diode, 4A, 600V V(RRM),

CBR4M-L060TIN/LEAD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	200 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	4 A
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal surface	TIN LEAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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CBR4M-L010 SERIES

w w w. c e n t r a l s e m i . c o m

SILICON BRIDGE RECTIFIERS

4.0 AMP, 100 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR4M-L010 series

types are silicon, single phase, full wave bridge rectifiers

designed for general purpose, high current applications.

MARKING: FULL PART NUMBER

CASE DM

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL -L010

Peak Repetitive Reverse Voltage

VRRM

100

DC Blocking Voltage

VR

100

RMS Reverse Voltage

Average Forward Current

Average Forward Current (TC=100°C)

Peak Forward Surge Current

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

IR

VF

VR(RMS)

IO

IFSM

TJ, Tstg

Θ

JC

70

-L020

200

140

CBR4M

-L040 -L060

400

600

400

280

4.0

8.0

200

-65 to +150

3.5

600

420

-L080

800

560

-L100

1000

700

UNITS

V

A

°C

°C/W

CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

MAX

VR=Rated VRRM

10

IF=6.28A

1.1

UNITS

μA

V

R4 (11-October 2013)

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