CAT28F010HRA-90 datasheet, PDF

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CAT28F010HRA-90: Description128KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32; Categorystorage storage; File Size116KB，16 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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CAT28F010HRA-90 Overview

128KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32

CAT28F010HRA-90 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
Parts packaging code	TSOP
package instruction	TSOP1-R, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum access time	90 ns
command user interface	YES
Data polling	NO
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	18.4 mm
memory density	1048576 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	128KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	NO
type	NOR TYPE
width	8 mm
Base Number Matches	1

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CAT28F010

Licensed Intel

1 Megabit CMOS Flash Memory

second source

FEATURES

Fast read access time: 90/120 ns

Low power CMOS dissipation:

Commercial, industrial and automotive

temperature ranges

On-chip address and data latches

JEDEC standard pinouts:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100

A max (CMOS levels)

High speed programming:

–10

s per byte

–2 Sec Typ Chip Program

–32-pin DIP

–32-pin PLCC

–32-pin TSOP (8 x 20)

100,000 program/erase cycles

10 year data retention

Electronic signature

0.5 seconds typical chip-erase

12.0V

5% programming and erase voltage

Stop timer for program/erase

DESCRIPTION

The CAT28F010 is a high speed 128K x 8-bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after-sale

code updates. Electrical erasure of the full memory

contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard

EPROM and EEPROM devices. Programming and

Erase are performed through an operation and verify

algorithm. The instructions are input via the I/O bus,

using a two write cycle scheme. Address and Data are

latched to free the I/O bus and address bus during the

write operation.

The CAT28F010 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, 32-pin PLCC or 32-pin

TSOP packages.

I/O0–I/O7

BLOCK DIAGRAM

I/O BUFFERS

ERASE VOLTAGE

SWITCH

COMMAND

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

DATA

LATCH

SENSE

AMP

ADDRESS LATCH

Y-GATING

Y-DECODER

1,048,576 BIT

MEMORY

ARRAY

A0–A16

X-DECODER

VOLTAGE VERIFY

SWITCH

Characteristics subject to change without notice

Doc. No. MD-1019, Rev. G

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