ISO-9001 CERTIFIED BY DSCC
M.S.KENNEDY CORP.
QUAD N-CHANNEL
MOSFET POWER MODULE
3013
(315) 701-6751
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
•
Pin Compatible with MPM3013
•
QUAD Independent N - Channel MOSFETS
•
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
•
Avalanche Rated Devices
•
55 Volt, 25 Amp Rated
•
Low RDS (ON) - 0.022Ω For Each Die
DESCRIPTION:
The MSK 3013 is a QUAD N-Channel power circuit packaged in a space efficient isolated ceramic tab power SIP
package. The MSK 3013 consists of four totally isolated N-Channel MOSFETs. The MSK 3013 uses M.S.Kennedy's
proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated
servo motor and disk drive systems. The MSK 3013 is a replacement for the MPM3013 with only minor differences
in specifications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
•
•
•
•
•
Stepper Motor Servo Control
Disk Drive Head Control
X-Y Table Control
Az-El Antenna Control
Various Switching Applications
1
PIN-OUT INFORMATION
1
2
3
4
5
6
Q1
Q1
Q1
Q2
Q2
Q2
Gate
Source
Drain
Gate
Source
Drain
7
8
9
10
11
12
Q3
Q3
Q3
Q4
Q4
Q4
Gate
Source
Drain
Gate
Drain
Source
Rev. B 7/00
ABSOLUTE MAXIMUM RATINGS
V
DSS
V
DGDR
V
GS
I
D
I
DM
R
TH-JC
Drain to Source Voltage
Drain to Gate Voltage
(R
GS
=1MΩ). . . . . . .
Gate to Source Voltage
(Continuous).. . . . . .
Continuous Current . .
Pulsed Current . . . . .
Thermal Resistance
(Junction to Case).. . .
. . .55V MAX
. . 55V MAX
. ±20V MAX
. . . 25A MAX
. . 49A MAX
. . 0.3°C/W
T
J
T
ST
T
C
T
LD
Junction Temperature. . . . . . . .
Storage Temperature. . . . . . . .
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds) . . . . . . . . . . .
. . . +175°C MAX
.-55°C TO +150°C
. .-55°C TO 125°C
. . . . .300°C MAX
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance
Drain-Source on Resistance
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
1
1
1
1
1
1
2
3
1
Test Conditions 4
VGS = 0
VDS = 55V
VGS = ±20V
VDS = VGS
VGS = 10V
VGS = 10V
VDS = 25V
ID = 0.25 mA
VGS = 0V
VDS = 0
ID = 250 µA
ID = 25A
ID = 25A
ID = 25A
Min.
55
-
-
2
-
-
17
-
-
-
-
-
-
-
-
-
-
MSK 3013
Typ.
-
-
-
-
0.033
-
-
-
-
-
7.3
69
47
60
1300
410
150
Max.
-
25
±100
4
0.040
0.022
-
65
12
27
-
-
-
-
-
-
-
Units
V
µA
nA
V
Ω
Ω
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
ID = 25A
VDS = 28V
VGS = 10V
VDD = 28V
ID = 25A
RG = 12
Ω
Turn-Off Delay Time
Fall Time
1
1
RD = 1.1
VGS = 0V
1
1
VDS = 25V
f = 1 MHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
Forward on Voltage
1
1
1
IS = 25A
IS = 25A
IS = 25A
VGS = 0V
di/dt = 100A/µS
di/dt = 100A/µS
-
-
-
1.3
65
160
1.75
98
240
V
nS
µC
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of
actual
device performance but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 T
A
=25°C unless otherwise specified. Parameters apply to each transistor in the module.
2
Rev. B 7/00
APPLICATION NOTES
N-CHANNEL GATES
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient
voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on.
This will keep the dissipation down to a minimum level [R
DS(ON)
specified in the data sheet]. How quickly the gate gets turned ON
and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate
ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise
in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's
have sufficient gate drive capability for the MSK 3013. If not, paralleled CMOS standard gates will usually be sufficient. A series
resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the MOSFET circuit. The
selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details.
Figure 1
BRIDGE DRIVE CONSIDERATIONS
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side
transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through",
and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well.
See Figure 3.
Figure 2
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate
resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo
systems such as locked antiphase PWM'ing for high bandwidth operation.
3
Rev. B 7/00
TYPICAL PERFORMANCE CURVES
4
Rev. B 7/00
MECHANICAL SPECIFICATIONS
TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED.
ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE LABELED.
ORDERING INFORMATION
PART
NUMBER
SCREENING LEVEL
MSK 3013
Industrial
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskenndy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
M.S. Kennedy Corp.
5
Rev. B 7/00
京公网安备 11010802033920号
EEWORLD
