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MR2A16ACYS35R

Description
Memory Circuit, 256KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44
Categorystorage    storage   
File Size1MB,20 Pages
ManufacturerEverspin Technologies
Environmental Compliance
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MR2A16ACYS35R Overview

Memory Circuit, 256KX16, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44

MR2A16ACYS35R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEverspin Technologies
Parts packaging codeTSOP2
package instructionTSOP2, TSOP44,.46,32
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum access time35 ns
JESD-30 codeR-PDSO-G44
length18.41 mm
memory density4194304 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesN/A
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.028 A
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
MR2A16A
FEATURES
• Fast 35 ns Read/Write cycle
• SRAM compatible timing, uses existing SRAM control-
lers without redesign
• Unlimited Read & Write endurance
• Data non-volatile for >20 years at temperature
• One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
• Replaces battery-backed SRAM solutions with MRAM
to improve reliability
• 3.3 volt power supply
• Automatic data protection on power loss
• Commercial, Industrial, Extended temperatures
• AEC-Q100 Grade 1 option
• All products meet MSL-3 moisture sensitivity level
• RoHS-compliant SRAM TSOP2 and BGA Packages
256K x 16 MRAM Memory
44-pin TSOP2
48-ball BGA
INTRODUCTION
RoHS
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga-
nized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The MR2A16A is the ideal memory solution for applications that must permanently store and re-
trieve critical data and programs quickly.
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The prod-
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright © Everspin Technologies 2015
1
MR2A16A Rev. 11.2, 6/2015
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