TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices
2N6989
2N6989U
2N6990
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
(1)
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
(3)
Emitter-Base Voltage
(3)
Collector Current
(3)
Total Power Dissipation
(3)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
50
75
6.0
800
1.5
1.0
0.4
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
20 PIN LEADLESS*
0
TO- 116*
2N6989
T
op
,
T
stg
1) Maximum voltage between transistors shall be
≥
500 Vdc
2) Derate linearly 8.57 mW/
0
C above T
A
= +25
0
C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/
0
C above T
A
= +25
0
C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
@ T
A
= +25
0
C
2N6989
(2)
2N6989U
(2)
2N6990
(2)
Operating & Storage Junction Temperature Range
C
2N6989U
14 PIN FLAT PACK*
2N6990
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
50
10
10
10
10
Max.
Unit
Vdc
ηAdc
µAdc
ηAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 75 Vdc; I
c
= 10
µAdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 6.0Vdc; I
c
= 10
µAdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
h
FE
50
75
100
100
30
325
300
V
CE(sat)
0.3
1.0
0.6
1.2
2.0
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
h
fe
h
fe
C
obo
C
ibo
2.5
50
8.0
8.0
25
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
ADI Reference Circuit
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