2N7002CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
0.76 ± 0.15
(0.03 ± 0.006)
• V
(BR)DSS
= 60V
A
1.40
(0.055)
max.
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.31 rad.
(0.012)
Ω
• RDS
(ON)
= 7.5Ω
• I
D
= 0.115A
1.02 ± 0.10
(0.04 ± 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Gate
PAD 2 – Source
PAD 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Storage Temperature Range
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
60V
±40V
±0.115A
±0.073A
0.8A
200mW
80mW
–55 to 150°C
–55 to 150°C
Operating Junction Temperature Range
* Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
2N7002CSM
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS
V
(BR)DSS
Gate – Source Breakdown Voltage
V
GS(th)
I
GSS
I
DSS
I
D(on)*
Gate Threshold Voltage
Gate – Body Leakage Current
Zero Gate Voltage Drain Current
On–State Drain Current
V
GS
= 0V
V
DS
= V
GS
V
DS
= 60V
I
D
= 10µA
I
D
= 0.25mA
V
GS
= 0V
T
CASE
= 125°C
V
DS
≥2V
DS(ON)
V
GS
= 10V
V
GS
= 5V
R
DS(on)*
Drain – Source On Resistance
I
D
= 50mA
V
GS
= 10V
I
D
= 0.5A
V
GS
= 5V
V
DS(on)*
g
FS*
g
OS*
C
iss
C
oss
C
rss
t
ON
t
OFF
Drain – Source On Voltage
Forward Transconductance
Common Source Output Conductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
V
DD
= 30V
R
L
= 150Ω
I
D
= 0.2A
* Pulse Test: PW = 80
µs
,
δ ≤
1%
V
GEN
= 10V
R
G
= 25Ω
7
20
7
20
ns
V
DS
= 25V
V
GS
= 0V
f = 1MHz
16
11
2
50
25
5
pF
V
GS
= 10V
I
D
= 0.5A
V
DS
= 10V
V
DS
= 5V
T
CASE
= 125°C
I
D
= 0.2A
I
D
= 50mA
80
T
CASE
= 125°C
I
D
= 50mA
T
CASE
= 125°C
500
1000
5
9
2.5
4.4
0.25
1.25
2.2
170
500
7.5
13.5
7.5
13.5
0.375
3.75
6.75
ms
µs
V
Ω
60
1
70
2.15
2.5
±100
1
500
V
nA
µA
mA
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= ±20VV
DS
= 0V
Parameter
R
θJA
Thermal Resistance, Junction to Ambient
Min.
Typ.
Max.
625
Unit
°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
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