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MBR2545CT

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size345KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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MBR2545CT Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB,

MBR2545CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionR-PSFM-T3
Reach Compliance Codeunknown
Is SamacsysN
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.82 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage45 V
Maximum reverse current200 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
MBR2530CT---MBR25100CT
VOLTAGE RANGE: 30 -
100
V
CURRENT:
30
A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AB
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.08ounce, 2.24 grams
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
MBR
MBR MBR MBR MBR MBR MBR
UNITS
2530CT 2535CT 2540CT 2545CT 2550CT 2560CT 2580CT 25100CT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 130°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forward
voltage
(Note 1)
(I
F
=15A,T
C
=25
(I
F
=15A,T
C
=125
(I
F
=30A ,T
C
=25
(I
F
=30A,T
C
=125
Maximum reverse current
at rated DC blocking voltage
)
)
)
)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
35
25
35
40
28
40
45
32
45
30
150
50
35
50
60
42
60
80
56
80
100
70
100
V
V
V
A
A
-
0.75
0.65
-
-
1.0
0.85
-
-
-
mA
V
V
F
-
0.82
0.73
0.2
40
1.5
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
50
/W
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
-
55
---- + 150
-
55
---- + 150
www.galaxycn.com
Document Number 0267007
BL
GALAXY ELECTRICAL
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