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KBJ4B

Description
Bridge Rectifier Diode, 4A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size134KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

KBJ4B Overview

Bridge Rectifier Diode, 4A, 100V V(RRM),

KBJ4B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
KBJ4A - - - KBJ4M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECT IFIERS
Rating to 1000V PRV
Surge overload rating to
150
Am peres peak
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique res ults in inexpens ive product
Lead s olderable per MIL-STD-202 m ethod 208
KBJ4
MECHANCAL DATA
Polarity:Sym bols m olded on body
Weight:0.16
ounces, 4.45 grams
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
KBJ
4A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard
Output current
@T
A
=100
KBJ
4B
100
70
100
KBJ
4D
200
140
200
KBJ
4G
400
280
400
4.0
KBJ
4J
600
420
600
KBJ
4K
800
560
800
KBJ
4M
1000
700
1000
UNITS
V
V
V
A
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
C
J
R
θJC
T
J
T
STG
1.0
10.0
1.0
45
2.2
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
pF
/W
Typical junction capacitance per element
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTES:1.Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC
2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.
www.galaxycn.com
Document Number 0287066
BL
GALAXY ELECTRICAL
1.

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