HB56SW872ESN-6B datasheet, PDF

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HB56SW872ESN-6B: DescriptionEDO DRAM Module, 8MX72, 60ns, MOS; Categorystorage storage; File Size385KB，28 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56SW872ESN-6B Overview

EDO DRAM Module, 8MX72, 60ns, MOS

HB56SW872ESN-6B Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
package instruction	DIMM, DIMM168
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	603979776 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	31.75 mm
Maximum standby current	0.036 A
Maximum slew rate	1.89 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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HB56SW872ESN-6B/7B/8B

8,388,608-word

72-bit High Density Dynamic RAM Module

168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM

ADE-203-560 (B) (Z)

Preliminary - Rev. 0.2

Jun. 17, 1996

Description

The HB56SW872ESN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

developed as an optimized main memory solution for 4 and 8 Byte processor applications.

The HB56SW872ESN is a 8M

72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM

(HM51W16405) sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect

(PD).

The HB56SW872ESN offers Extended Data Out (EDO) Page Mode as a high speed access mode. An

outline of the HB56SW872ESN is 168-pin socket type package (dual lead out). Therefore, the

HB56SW872ESN makes high density mounting possible without surface mount technology. The

HB56SW872ESN provides common data inputs and outputs. Decoupling capacitors are mounted beneath

each TCP on the module board.

Features

•

168-pin socket type package (Dual lead out)



Lead pitch: 1.27 mm

•

Single 3.3 V (+0.3, –0.15 V) supply

•

High speed



Access time: t

RAC

= 60/70/80 ns (Max)



Access time: t

CAC

= 15/18/20 ns (Max)

•

Low power dissipation



Active mode: 5.51/4.86/4.54 W (Max)



Standby mode (TTL): 259 mW (Max)



Standby mode (CMOS): 130 mW (Max)

•

EDO page mode capability

•

4,096 refresh cycle: 64 ms

•

3 variations of refresh



RAS-only

refresh



CAS-before-RAS

refresh



Hidden refresh

Preliminary: This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

HB56SW872ESN-6B Related Products

	HB56SW872ESN-6B	HB56SW872ESN-7B	HB56SW872ESN-8B
Description	EDO DRAM Module, 8MX72, 60ns, MOS	EDO DRAM Module, 8MX72, 70ns, MOS	EDO DRAM Module, 8MX72, 80ns, MOS
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	70 ns	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	603979776 bit	603979776 bit	603979776 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	72	72	72
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	168	168	168
word count	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	8MX72	8MX72	8MX72
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
Maximum seat height	31.75 mm	31.75 mm	31.75 mm
Maximum standby current	0.036 A	0.036 A	0.036 A
Maximum slew rate	1.89 mA	1.71 mA	1.53 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3.15 V	3.15 V	3.15 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO
technology	MOS	MOS	MOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	1	1	-

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