Data Sheet No. 2N918
Type 2N918
Geometry
0013
Polarity NPN
Qual Level: JAN - JANTXV
Features:
•
•
•
•
General-purpose low-power NPN
silicon transistor.
Housed in
TO-72
case.
Also available in chip form using
the
0013
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/301
which
Semicoa meets in all cases.
Generic Part Number:
2N918
REF: MIL-PRF-19500/301
TO-72
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
Rating
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25 C
Derate above 25
o
C
Power Dissipation, T
A
= 25
o
C
Derate above 25 C
Operating Junction Temperature
Storage Temperature
o
o
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
15
30
3.0
50
200
1.14
Unit
V
V
V
mA
mW
mW/
o
C
mW
mW/ C
o
o
P
T
300
1.71
T
J
T
STG
-65 to +200
-65 to +200
C
C
o
Data Sheet No. 2N918
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 1.0 µA
Collector-Emitter Breakdown Voltage
I
C
= 3.0 mA
Emitter-Base Breakdown Voltage
I
C
= 10 µA
Collector-Base Cutoff Current
V
CB
= 25 V
Collector-Base Cutoff Current
V
CB
= 25 V, T
A
= 150
o
C
Emitter-Base Cutoff Current
V
EB
= 2.5 V
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)CEO
I
CBO1
I
CBO2
I
EBO
Min
30
15
3.0
3.0
---
---
Max
---
---
---
10
1
10
Unit
V
V
V
nA
µA
nA
ON Characteristics
Forward Current Transfer Ratio
I
C
= 500 µA, V
CE
= 10 V
I
C
= 3.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 3.0 mA, V
CE
= 1.0 V, T
C
= -55 C
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
o
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BE(sat)
V
CE(sat)
Min
10
20
20
10
---
---
Max
---
200
---
---
1.0
0.4
Unit
---
---
---
---
V dc
V dc
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Symbol
|h
FE
|
NF
G
PE
r
b
'C
c
p
o
n
C
OBO1
C
OBO2
C
IBO
Min
6.0
---
15
---
---
---
---
---
---
Max
18
6.0
---
25
30
25
3.0
1.7
2.0
Unit
---
dB
dB
ps
mW
---
pF
pF
pF
Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 4.0 mA, f = 100 MHz
Noise Figure
V
CE
= 6 V, I
C
= 1.0 mA, f = 60 MHz
Small Signal Power Gain
V
CB
= 12 V, I
C
= 6.0 mA, f = 200 MHz
Collector - Base Time Constant
V
CB
= 10 V, I
E
= -4.0 mA, f = 79.8 MHz
Oscillator Power Output
V
CB
= 15 V, I
C
= 8.0 mA, f > 500 MHz
Collector Efficiency
V
CB
= 15 V, I
C
= 8.0 mA, f > 500 MHz
Open Circuit Output Capacitance
V
CB
= 0 V, I
E
= 0, 100 kHz < f < 1 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
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