295L Cooled DFB Laser at 1550 nm and DWDM Wavelengths
Data Sheet
Data Sheet
May 2005
May 2005
295L Edge-Emitting DFB Laser Diode Chip at 1550 nm and DWDM
wavelengths for use in Cooled applications up to 2.7Gb/sec
Features
Low Threshold Current
High Output Power
Near Circular beam pattern
Bondable junction-up or junction-down
Long history of proven field reliability
Very high reliability design, including
o
High quality MOCVD epitaxy
o
Patented low-penetration, ohmic
p-contact design
o
Patented junction-side bonding
pads providing a barrier to solder
penetration
o
Patented hermetic facet coatings
Qualified as per intent of Telcordia GR-468
Operating temperature:15 to 48C
DWDM wavelengths available (1530nm to
1610 nm with 0.8nm spacing)
Description
The 295L is a 1550nm single mode edge-emitting laser
diode chip for use in cooled applications up to
2.7Gb/sec suitable for single channel or DWDM
applications. It is available in all C and L band DWDM
wavelengths from 1530nm to 1610 nm with 0.8nm
spacing. The design is a capped mesa buried hetero-
structure (CMBH) grown on n-type substrate with multi-
quantum well (MQW) active layers and distributed-
feedback (DFB) grating layer. The facets are coated
with an anti-reflectance layer on the front facet and a
high reflectance coating on the rear facet. Gold
bonding pads are provided on both the p and n sides.
A hexadecimal number appears on both sides of the
chip for identification purposes. All laser chips come
from wafers that have been certified using a
representative lot of devices that must achieve an
acceptable yield for burn-in and other multi-
temperature, CW and dynamic tests. Each shipped
bare die is fully tested at 25C. These die are identical
to those used in CyOptics' components level products.
Applications
Supports performance up to 2.7 Gb/sec bit
rate, 15 to 48C operating temperature
range up to 200 km (3700 ps/nm
dispersion)
DWDM SFP transceivers
Long haul-transmission system
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295L Cooled DFB Laser at 1550 nm and DWDM Wavelengths
Data Sheet
May 2005
Electro-Optical Characteristics (T
C
= 25C)
Optical output measured into NA = 0.45
Parameter
Lasing Threshold
Current
Slope Efficiency
Front Power
Front/Back Ratio
Forward Voltage
Series Resistance
Reverse Current
Kink Deviation
1
Wavelength
2
Side Mode Suppression
Ratio
Dynamic Spectral Width
Linewidth Enhancement
Factor
Wavelength/Temperature
Coefficient
Wavelength/Current
Coefficient
Symbol
Ith
η
La
Asym
Vf
R
Irev
-
λ
SMSR
∆λ
α
dλ/dT
dλ/dI
T= 25 to 48C
Test
Conditions
CW,
La=3mW
If=Ith + 40mA
La=3mW
If=50mA
La=3mW
Vf=-2V
Ith to 100mA
La=5mW
La=5mW
2.5 GHz
at -20dB
1.0
0.2
7
1.5
Min
Typ
14
0.27
11
4
1.0
4
<0.1
-
Code List
42
0.22
1.4
0.09
2.0
nm/C
nm/mA
dB/Hz
34
30
degrees
degrees
GHz
100
ps
Max
25
Unit
mA
W/A
mW
-
V
Ohms
mA
%
nm
dB
nm
-0.4
35
6
1.4
7
0.5
8
+0.4
I = Ith +20mA
0.007
to Ith + 60mA
La=5mW
RIN
-140
Relative Intensity Noise
50MHz – 5
GHz
La=3mW
31
Farfield (Vertical)
θv
La=3mW
28
Farfield (Horizontal)
θh
La=5mW
BW
5
Bandwidth
at -3dB
Unfiltered 20-
40
80%;
Rise Time
τ
r
ER=10dB
Unfiltered 20-
80%;
100
Fall Time
τ
f
ER=10dB
If = forward current
Vf = forward voltage
La = Light from the front facet
150
ps
1. A kink is indicated by structure in the light/current slope (dL/dI). The magnitude of the structure is
normalized (to the estimated maximum slope efficiency) using the deviation of the structure from the
curve that would have occurred if the dL/dI had remained smoothly varying with I.
2. All wavelengths available for DWDM applications.
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295L Cooled DFB Laser at 1550 nm and DWDM Wavelengths
Absolute Maximum Ratings
Data Sheet
May 2005
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.
These are absolute stress ratings only. Functional operation of the device is not implied at these or
any other conditions in excess of those given in the operations sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Unit
Forward Current
Front Power*
Reverse Voltage
Operating Temp
Storage Temperature
Storage Relative
Humidity
mA
mW
V
C
C
%
Min
Max
150
40
2
48
100
85
15
-40
* These maximum stresses are to be applied only after the chip is properly bonded to a heat sink.
Applying current to a bare chip can damage the device.
Handling Procedures
These devices are static sensitive. Take appropriate ESD precautions to avoid damage.
InP chips are inherently fragile and easily damaged. Special caution should be used when
handling. Do not handle with tweezers. A vacuum tip with a flat surface is recommended.
Facets should not be touched.
Suggested bonding condition:
o Eutectic AuSn solder
o Bonding temperature: 350C
o Bonding force: 30 grams (not exceed 40 grams)
o Bonding force and temperature should be applied in a gradual fashion
o Bonding time: <= 10 seconds
Suggested burn-in conditions:
o Chip heatsink temperature: 85C
o Current: 190mA
o Time: 12 hours
o Pass Criteria: Delta Ith (T=60C) between –3mA and +3mA
Electrical & Optical overstress (EOS) Information
Switching transients can cause electrical overstress EOS damage in a chip.
EOS may result from improper ESD handling, improper power sequencing, a faulty power supply or
an intermittent connection.
Proper turn-on sequence:
a. All ground connections
b. Most negative supply
c. Most positive supply
d. All remaining connections
Reverse order to turn-off.
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295L Cooled DFB Laser at 1550 nm and DWDM Wavelengths
Data Sheet
May 2005
Dimensions
Image not to Scale!!
Laser Safety
All versions of these laser chips are classified as Class I per CDRH, 21 CFR 1040 Laser Safety
requirements.
All versions are classified as Class 1M laser chips consistent with
IEC
®
60825-2: 2001.
This product complies with 21 CFR 1040.10 and 1040.11.
Because of size constraints, laser safety labeling is attached to the outside of the shipping carton.
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295L Cooled DFB Laser at 1550 nm and DWDM Wavelengths
Data Sheet
May 2005
Qualification Information
Hazardous substance content is RoHS compliant
295L laser chips have passed all qualification requirements as specified by Telcordia GR-468.
Although all chips shipped come from wafers certified to meet stringent burn-in requirements
individual chips should be burned-in to filter out a small percentage of infant failures.
Hazard rate estimated to be ~ 20 FIT over 20 years assuming usage at an effective 50C junction
temperature.
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