DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PB709A
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 19
1999 Apr 23
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
2PB709A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.
1
3
MARKING
TYPE NUMBER
2PB709AQ
2PB709AR
2PB709AS
MARKING CODE
BQ
BR
BS
1
Top view
2
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−45
−45
−6
−100
−200
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
2PB709AQ
2PB709AR
2PB709AS
V
CEsat
C
c
f
T
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PB709AQ
2PB709AR
2PB709AS
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
I
C
=
−100
mA; I
B
=
−10
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−1
mA; V
CE
=
−10
V; f = 100 MHz
60
70
80
−
−
−
CONDITIONS
I
E
= 0; V
CB
=
−45
V
I
E
= 0; V
CB
=
−45
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−10
V
160
210
290
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
2PB709A
UNIT
K/W
MAX.
−10
−5
−10
260
340
460
−500
5
UNIT
nA
µA
nA
mV
pF
MHz
MHz
MHz
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
2PB709A
SOT346
E
D
B
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.3
1.0
A
1
0.1
0.013
b
p
0.50
0.35
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
1.9
e
1
0.95
H
E
3.0
2.5
L
p
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
OUTLINE
VERSION
SOT346
REFERENCES
IEC
JEDEC
TO-236
EIAJ
SC-59
EUROPEAN
PROJECTION
ISSUE DATE
98-07-17
1999 Apr 23
4
Philips Semiconductors
Product specification
PNP general purpose transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
2PB709A
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
5
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