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DS1200SN

Description
Non-Volatile SRAM, 128X8, CMOS, PDSO16
Categorystorage    storage   
File Size226KB,7 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
Download Datasheet Parametric Compare View All

DS1200SN Overview

Non-Volatile SRAM, 128X8, CMOS, PDSO16

DS1200SN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMaxim
package instructionSOP, SOP16,.4
Reach Compliance Codenot_compliant
Is SamacsysN
JESD-30 codeR-PDSO-G16
JESD-609 codee0
memory density1024 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of terminals16
word count128 words
character code128
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP16,.4
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum standby current0.0025 A
Maximum slew rate0.006 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
DS1200
Serial RAM Chip
www.maxim-ic.com
FEATURES
§
§
§
§
§
§
§
§
§
§
§
§
§
1024 Bits of Read/Write Memory
Low Data Retention Current for Battery
Backup Applications
Four Million Bits/Second Data Rate
Single-Byte or Multiple-Byte Data Transfer
Capability
No Restrictions on the Number of Write
Cycles
Low-Power CMOS Circuitry
PIN ASSIGNMENT
16-Pin SO (300mil)
See Mech. Drawings Section
APPLICATIONS
Software Authorization
Computer Identification
System Access Control
Secure Personnel Areas
Calibration
Automatic System Setup
Traveling Work Record
PIN DESCRIPTION
V
CC
RST
DQ
CLK
GND
V
BAT
NC
- +5V
- Reset
- Data Input/Output
- Clock
- Ground
- Battery (+)
- No Connection
DESCRIPTION
The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual
8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a
microprocessor is minimized by on-chip circuitry, which permits data transfers with only three signals:
CLK, RST , and DQ.
Nonvolatility can be achieved by connecting a battery of 2V to 4V at the battery input V
BAT.
A load of
0.5
mA
should be used to size the external battery for the required data retention time. If nonvolatility is
not required the V
BAT
pin should be grounded.
1 of 7
092702

DS1200SN Related Products

DS1200SN DS1200
Description Non-Volatile SRAM, 128X8, CMOS, PDSO16 IC sram 1kbit 4mhz 10dip
Is it Rohs certified? incompatible incompatible
Maker Maxim Maxim
package instruction SOP, SOP16,.4 0.300 INCH, DIP-10
Reach Compliance Code not_compliant not_compliant
JESD-30 code R-PDSO-G16 R-PDIP-T10
JESD-609 code e0 e0
memory density 1024 bit 1024 bit
Memory IC Type NON-VOLATILE SRAM NON-VOLATILE SRAM
memory width 8 8
Number of terminals 16 10
word count 128 words 128 words
character code 128 128
Maximum operating temperature 85 °C 70 °C
organize 128X8 128X8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP DIP
Encapsulate equivalent code SOP16,.4 DIP10,.3
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Certification status Not Qualified Not Qualified
Maximum standby current 0.0025 A 0.0025 A
Maximum slew rate 0.006 mA 0.006 mA
surface mount YES NO
technology CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal pitch 1.27 mm 2.54 mm
Terminal location DUAL DUAL
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