|
DS1200SN |
DS1200N |
| Description |
Non-Volatile SRAM, 128X8, 125ns, CMOS, PDSO16, |
Non-Volatile SRAM, 128X8, 125ns, CMOS, PDIP10, |
| Is it Rohs certified? |
incompatible |
incompatible |
| Maker |
DALLAS |
DALLAS |
| Reach Compliance Code |
unknown |
unknown |
| Is Samacsys |
N |
N |
| Maximum access time |
125 ns |
125 ns |
| Other features |
DATA RETENTION > 10 YEARS |
DATA RETENTION > 10 YEARS |
| JESD-30 code |
R-PDSO-G16 |
R-PDIP-T10 |
| JESD-609 code |
e0 |
e0 |
| memory density |
1024 bit |
1024 bit |
| Memory IC Type |
NON-VOLATILE SRAM |
NON-VOLATILE SRAM |
| memory width |
8 |
8 |
| Number of functions |
1 |
1 |
| Number of ports |
1 |
1 |
| Number of terminals |
16 |
10 |
| word count |
128 words |
128 words |
| character code |
128 |
128 |
| Operating mode |
SYNCHRONOUS |
SYNCHRONOUS |
| Maximum operating temperature |
85 °C |
85 °C |
| Minimum operating temperature |
-40 °C |
-40 °C |
| organize |
128X8 |
128X8 |
| Output characteristics |
3-STATE |
3-STATE |
| Exportable |
NO |
NO |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| encapsulated code |
SOP |
DIP |
| Encapsulate equivalent code |
SOP16,.4 |
DIP10,.3 |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
IN-LINE |
| Parallel/Serial |
SERIAL |
SERIAL |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum standby current |
0.0025 A |
0.0025 A |
| Maximum slew rate |
0.006 mA |
0.006 mA |
| Maximum supply voltage (Vsup) |
5.5 V |
5.5 V |
| Minimum supply voltage (Vsup) |
4.5 V |
4.5 V |
| Nominal supply voltage (Vsup) |
5 V |
5 V |
| surface mount |
YES |
NO |
| technology |
CMOS |
CMOS |
| Temperature level |
INDUSTRIAL |
INDUSTRIAL |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Terminal form |
GULL WING |
THROUGH-HOLE |
| Terminal pitch |
1.27 mm |
2.54 mm |
| Terminal location |
DUAL |
DUAL |
| Base Number Matches |
1 |
1 |