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DM28HC256H-90/B

Description
EEPROM, 32KX8, 90ns, Parallel, CMOS, CDIP28
Categorystorage    storage   
File Size419KB,12 Pages
ManufacturerLSC/CSI
Websitehttps://lsicsi.com
Download Datasheet Parametric View All

DM28HC256H-90/B Overview

EEPROM, 32KX8, 90ns, Parallel, CMOS, CDIP28

DM28HC256H-90/B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLSC/CSI
package instructionDIP, DIP28,.6
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Is SamacsysN
Maximum access time90 ns
Other featuresAUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-GDIP-T28
JESD-609 codee0
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.00035 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
Maximum write cycle time (tWC)3 ms
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