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HSCH-5830

Description
Mixer Diode, Low Barrier, K Band, Silicon
CategoryDiscrete semiconductor    diode   
File Size89KB,3 Pages
ManufacturerBroadcom
Download Datasheet Parametric View All

HSCH-5830 Overview

Mixer Diode, Low Barrier, K Band, Silicon

HSCH-5830 Parametric

Parameter NameAttribute value
MakerBroadcom
package instructionS-CQMW-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationRING, 4 ELEMENTS
Maximum diode capacitance0.1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandK BAND
JESD-30 codeS-CQMW-F4
JESD-609 codee3
Number of components4
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Pulse input maximum power0.6 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeLOW BARRIER
Base Number Matches1
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