2SA1034 datasheet, PDF - EEWORLD Datasheet

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2SA1034: DescriptionSilicon PNP epitaxial planer type; CategoryDiscrete semiconductor The transistor; File Size39KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SA1034 Overview

Silicon PNP epitaxial planer type

2SA1034 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Transistor

2SA1034, 2SA1035

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification

Complementary to 2SC2405 and 2SC2406

Unit: mm

s

Features

q

2.9

–0.05

Parameter

Collector to

base voltage

Collector to

2SA1034

2SA1035

2SA1034

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

–35

–55

–35

–55

–5

–100

–50

200

150

–55 ~ +150

Unit

+0.2

1.1

–0.1

2

emitter voltage 2SA1035

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

V

mA

mW

˚C

1:Base

2:Emitter

3:Collector

JEDEC:TO–236

EIAJ:SC–59

Mini Type Package

Marking symbol :

F

(2SA1034)

H

(2SA1035)

s

Electrical Characteristics

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

Noise voltage

*

h

FE1

(Ta=25˚C)

Symbol

I

CBO

I

CEO

Conditions

V

CB

= –10V, I

E

= 0

V

CE

= –10V, I

B

= 0

I

C

= –10µA, I

E

= 0

I

C

= –2mA, I

B

= 0

I

E

= –10µA, I

C

= 0

V

CE

= –5V, I

C

= –2mA

I

C

= –100mA, I

B

= –10mA

*2

V

CE

= –1V, I

C

= –100mA

*2

V

CB

= –5V, I

E

= 2mA, f = 200MHz

V

CE

= –10V, I

C

= –1mA, G

V

= 80dB

R

g

= 100kΩ, Function = FLAT

*2

min

typ

0 to 0.1

0.1 to 0.3

0.4±0.2

0.8

V

max

–100

–1

0.16

–0.06

+0.1

0.4

–0.05

+0.1

s

Absolute Maximum Ratings

1.9±0.2

Low noise voltage NV.

High foward current transfer ratio h

FE

.

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

(Ta=25˚C)

2.8

–0.3

0.65±0.15

+0.2

+0.25

1.5

–0.05

0.65±0.15

0.95

1

+0.2

0.95

3

1.45

Unit

nA

µA

V

2SA1034

2SA1035

2SA1034

2SA1035

V

CBO

V

CEO

V

EBO

h

FE*1

V

CE(sat)

V

BE

f

T

NV

–35

–55

–35

–55

–5

180

– 0.7

200

700

– 0.6

–1.0

V

MHz

150

mV

Rank classification

Rank

h

FE

R

180 ~ 360

2SA1034

2SA1035

FR

HR

S

260 ~ 520

FS

HS

T

360 ~ 700

FT

HT

Pulse measurement

Marking

Symbol

1

2SA1034 Related Products

	2SA1034	2SA1035
Description	Silicon PNP epitaxial planer type	Silicon PNP epitaxial planer type
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.05 A	0.05 A
Collector-emitter maximum voltage	35 V	55 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	180	180
JEDEC-95 code	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
Base Number Matches	1	1

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