HUFA76409D3ST_R4974 datasheet, PDF

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HUFA76409D3ST_R4974: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size207KB，10 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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HUFA76409D3ST_R4974 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

HUFA76409D3ST_R4974 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Reach Compliance Code	not_compliant
Is Samacsys	N
Configuration	Single
Maximum drain current (Abs) (ID)	18 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e3
Humidity sensitivity level	1
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	49 W
surface mount	YES
Terminal surface	Matte Tin (Sn)
Base Number Matches	1

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HUFA76409D3, HUFA76409D3S

Data Sheet

December 2001

17A, 60V, 0.071 Ohm, N-Channel, Logic

Level UltraFET Power MOSFETs

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

Features

• Ultra Low On-Resistance

- r

DS(ON)

= 0.063Ω,

10V

- r

DS(ON)

= 0.071Ω,

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

SOURCE

DRAIN

(FLANGE)

HUFA76409D3

HUFA76409D3S

Symbol

• Switching Time vs R

Curves

Ordering Information

PART NUMBER

PACKAGE

TO-251AA

TO-252AA

BRAND

76409D

HUFA76409D3

HUFA76409D3S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, e.g., HUFA76409D3ST.

Absolute Maximum Ratings

= 25

C, Unless Otherwise Specified

HUFA76409D3, HUFA76409D3SS

UNITS

±16

Figure 4

Figures 6, 17, 18

0.327

-55 to 175

300

260

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

= 25

C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 25

C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 135

C, V

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T

= 135

C, V

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

pkg

NOTE:

1. T

= 25

C to 150

CAUTION:

Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUFA76409D3, HUFA76409D3S Rev. A

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