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BFR194E6327

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP
CategoryDiscrete semiconductor    The transistor   
File Size162KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BFR194E6327 Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP

BFR194E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-based maximum capacity2 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz
Base Number Matches1

BFR194E6327 Related Products

BFR194E6327
Description RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP
Maker SIEMENS
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Is Samacsys N
Maximum collector current (IC) 0.1 A
Collector-based maximum capacity 2 pF
Collector-emitter maximum voltage 15 V
Configuration SINGLE
highest frequency band L BAND
JESD-30 code R-PDSO-G3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 5000 MHz
Base Number Matches 1

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