BYP101 datasheet, PDF - EEWORLD Datasheet

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BYP101: DescriptionRectifier Diode, 1 Phase, 1 Element, 15A, 1000V V(RRM), Silicon, TO-218AD,; CategoryDiscrete semiconductor diode; File Size26KB，3 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BYP101 Overview

Rectifier Diode, 1 Phase, 1 Element, 15A, 1000V V(RRM), Silicon, TO-218AD,

BYP101 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.9 V
JEDEC-95 code	TO-218AD
JESD-30 code	R-PSFM-T2
JESD-609 code	e0
Maximum non-repetitive peak forward current	75 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.11 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BYP 101

FRED Diode

• Fast recovery epitaxial diode

• Soft recovery characteristics

Type

BYP 101

V

RRM

1000V

I

FRMS

25A

t

rr

80ns

Package

TO-218 AD

Ordering Code

C67047-A2072-A2

Maximum Ratings

Parameter

Mean forward current

Symbol

Values

15

Unit

A

25

70

I

FAV

I

FRMS

I

FSM

I

FRM

150

∫

i

2

dt

25

T

C

= 90 °C,

D

= 0.5

RMS forward current

Surge forward current, sine halfwave, aperiodic

T

j

= 100 °C,

f

= 50 Hz

Repetitive peak forward current

T

j

= 100 °C,

t

p

≤

10 µs

i

2

t

value

T

j

= 100 °C,

t

p

= 10 ms

Repetitive peak reverse voltage

Surge peak reverse voltage

Power dissipation

A

2

s

1000

W

40

-40 ... + 150

≤

1.5

≤

46

E

40 / 150 / 56

-

K/W

°C

V

RRM

V

RSM

P

tot

T

j

T

stg

R

thJC

R

thJA

-

T

C

= 90 °C

Chip or operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip-ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Semiconductor Group

1

12.96

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