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BFR106E6327

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size156KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BFR106E6327 Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon, NPN

BFR106E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz
Base Number Matches1
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