MCP111/112
Micropower Voltage Detector
Features
• Ultra-low supply current: 1.75 µA (max.)
• Precision monitoring options of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
• Resets microcontroller in a power-loss event
• Active-low V
OUT
pin:
-
MCP111
active-low, open-drain
-
MCP112
active-low, push-pull
• Available in SOT23-3, TO-92, SC-70 and
SOT-89-3 packages
• Temperature Range:
- Extended: -40°C to +125°C
(except
MCP1XX-195)
- Industrial: -40°C to +85°C (MCP1XX-195
only)
• Pb-free devices
Package Types
3-Pin SOT23-3/SC-70
V
OUT
1
MCP111/112
3-Pin SOT-89
V
DD
3 V
DD
MCP111/112
2
3
V
OUT
V
DD
V
SS
1
V
SS
2
3-Pin TO-92
V
OUT
V
DD
V
SS
Applications
• Critical Microcontroller and Microprocessor
Power-Monitoring Applications
• Computers
• Intelligent Instruments
• Portable Battery-Powered Equipment
Block Diagram
V
DD
Comparator
+
–
Output
Driver
V
OUT
Description
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Eight different trip voltages are
available.
Band Gap
Reference
V
SS
TABLE 1:
Device
DEVICE FEATURES
Output
Type
Pull-up Resistor
External
No
No
No
External
Internal (~95 kΩ)
Reset Delay
(typ)
No
No
120 ms
120 ms
120 ms
120 ms
Package Pin Out
(Pin # 1, 2, 3)
V
OUT
, V
SS
, V
DD
V
OUT
, V
SS
, V
DD
RST, V
DD
, V
SS
V
SS
, RST, V
DD
RST, V
DD
, V
SS
RST, V
DD
, V
SS
See
MCP102/103/121/131
Data Sheet
(DS21906)
See
MCP102/103/121/131
Data Sheet
(DS21906)
See
MCP102/103/121/131
Data Sheet
(DS21906)
See
MCP102/103/121/131
Data Sheet
(DS21906)
Comment
MCP111
MCP112
MCP102
MCP103
MCP121
MCP131
Open-drain
Push-pull
Push-pull
Push-pull
Open-drain
Open-Drain
©
2005 Microchip Technology Inc.
DS21889D-page 1
MCP111/112
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings†
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V
Input current (V
DD
) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Rated Rise Time of V
DD
. . . . . . . . . . . . . . . . . . . . . . 100V/µs
All inputs and outputs (except RST) w.r.t. V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to (V
DD
+ 1.0V)
RST output w.r.t. V
SS
. . . . . . . . . . . . . . . . . . . -0.6V to 13.5V
Storage temperature . . . . . . . . . . . . . . . . . . . 65°C to + 150°C
Ambient temp. with power applied . . . . . . . -40°C to + 125°C
Maximum Junction temp. with power applied . . . . . . . . 150°C
ESD protection on all pins
. . . . . . . . . . . . . . . . . . . . . . . . . ≥
2 kV
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ (only
MCP111),
T
A
= -40°C to +125°C.
Parameters
Operating Voltage Range
Specified V
DD
Value to V
OUT
low
Operating Current
V
DD
Trip Point
MCP1XX-195
MCP1XX-240
MCP1XX-270
MCP1XX-290
MCP1XX-300
MCP1XX-315
MCP1XX-450
MCP1XX-475
V
DD
Trip Point Tempco
Note 1:
2:
3:
T
TPCO
Sym
V
DD
V
DD
I
DD
V
TRIP
Min
1.0
1.0
—
1.872
1.853
2.285
2.262
2.591
2.564
2.857
2.828
2.886
2.857
3.034
3.003
4.314
4.271
4.561
4.514
—
Typ
—
—
<1
1.900
1.900
2.320
2.320
2.630
2.630
2.900
2.900
2.930
2.930
3.080
3.080
4.380
4.380
4.630
4.630
±100
1.75
1.929
1.948
2.355
2.378
2.670
2.696
2.944
2.973
2.974
3.003
3.126
3.157
4.446
4.490
4.700
4.746
—
Max
5.5
Units
V
V
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
ppm/°
C
T
A
= +25°C
(Note 1)
T
A
= -40°C to +85°C
(Note 2)
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
I
RST
= 10 µA, V
RST
< 0.2V
Conditions
4:
Trip point is ±1.5% from typical value.
Trip point is ±2.5% from typical value.
This specification allows this device to be used in PICmicro
®
microcontroller applications that require the In-Circuit
Serial Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements).
This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V
OUT
). The
total time that the V
OUT
pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the
V
OUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between
0°C to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
This parameter is established by characterization and is not 100% tested.
DS21889D-page 2
©
2005 Microchip Technology Inc.
MCP111/112
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ (only
MCP111),
T
A
= -40°C to +125°C.
Parameters
Threshold Hysteresis
(min.
= 1%, max = 6%)
MCP1XX-195
MCP1XX-240
MCP1XX-270
MCP1XX-290
MCP1XX-300
MCP1XX-315
MCP1XX-450
MCP1XX-475
V
OUT
Low-level Output Voltage
V
OUT
High-level Output Voltage
Open-drain High Voltage on Output
V
OL
V
OH
V
ODH
Sym
V
HYS
Min
0.019
0.023
0.026
0.029
0.029
0.031
0.044
0.046
—
V
DD
– 0.6
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
0.114
0.139
0.158
0.174
0.176
0.185
0.263
0.278
0.4
—
13.5
(3)
Units
V
V
V
V
V
V
V
V
V
V
V
I
OL
= 500 µA, V
DD
= V
TRIP(MIN)
I
OH
= 1 mA, For only
MCP112
(push-pull output)
MCP111
only,
V
DD
= 3.0V, Time voltage >
5.5V applied
≤
100s,
current into pin limited to
2 mA, +25°C operation
recommended
Note 3, Note 4
Conditions
T
A
= +25°C
Open-drain Output Leakage Current
(MCP111 only)
Note 1:
2:
3:
I
OD
—
0.1
—
µA
4:
Trip point is ±1.5% from typical value.
Trip point is ±2.5% from typical value.
This specification allows this device to be used in PICmicro
®
microcontroller applications that require the In-Circuit
Serial Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements).
This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V
OUT
). The
total time that the V
OUT
pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the
V
OUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between
0°C to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
This parameter is established by characterization and is not 100% tested.
©
2005 Microchip Technology Inc.
DS21889D-page 3
MCP111/112
V
TRIP
1V
V
DD
t
RPU
t
RPD
V
OH
1V
V
OUT
t
RT
V
OL
FIGURE 1-1:
Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ
(only
MCP111),
T
A
= -40°C to +125°C.
Parameters
V
DD
Detect to V
OUT
Inactive
V
DD
Detect to V
OUT
Active
Sym
t
RPU
t
RPD
Min
—
—
Typ
90
130
Max
—
—
Units
µs
µs
Conditions
Figure 1-1
and C
L
= 50 pF
(Note 1)
V
DD
ramped from V
TRIP(MAX)
+
250 mV down to V
TRIP(MIN)
–
250 mV, per
Figure 1-1,
C
L
= 50 pF
(Note 1)
For V
OUT
10% to 90% of final
value per
Figure 1-1,
C
L
= 50 pF
(Note 1)
V
OUT
Rise Time After V
OUT
Active
t
RT
—
5
—
µs
Note 1:
These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ
(only
MCP111),
T
A
= -40°C to +125°C.
Parameters
Temperature Ranges
Specified Temperature Range
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
Thermal Resistance, 3L-SC-70
Thermal Resistance, 3L-TO-92
Thermal Resistance, 3L-SOT-89
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
336
340
131.9
110
—
—
—
—
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
J
T
A
-40
-40
—
-65
—
—
—
—
+85
+125
+150
+150
°C
°C
°C
°C
MCP1XX-195
Except
MCP1XX-195
Sym
Min
Typ
Max
Units
Conditions
DS21889D-page 4
©
2005 Microchip Technology Inc.
MCP111/112
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ (only
MCP111;
see
Figure 4-1),
T
A
= -40°C to +125°C.
1.6
1.4
1.2
I
DD
(uA)
I
DD
(uA)
1
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
140
-40
-20
0
Temperature (°C)
4.0V
2.8V
2.1V
1.7V
1.0V
1.6
MCP111-195
5.5V
5.0V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
MCP111-195
+125°C
+85°C
-40°C
+25°C
1.0
2.0
3.0
V
DD
(V)
4.0
5.0
6.0
FIGURE 2-1:
(MCP111-195).
1.2
1
I
DD
(uA)
0.8
0.6
0.4
I
DD
vs. Temperature
FIGURE 2-4:
I
DD
vs. V
DD
(MCP111-195).
MCP112-300
5.5V
5.0V
4.0V
2.8V
1.7V
2.1V
1.6
1.4
1.2
I
DD
(uA)
1
0.8
0.6
0.4
0.2
0
1.0
2.0
+85°C
-40°C
+25°C
+125°C
MCP112-300
0.2
0
20
40
60
80
100
120
-40
-20
0
1.0V
140
3.0
4.0
V
DD
(V)
5.0
6.0
Temperature (°C)
FIGURE 2-2:
(MCP112-300).
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
DD
vs. Temperature
FIGURE 2-5:
I
DD
vs. V
DD
(MCP112-300).
1.6
MCP112-475
4.0V
2.8V
5.5V
2.1V
1.4
1.2
I
DD
(uA)
1
0.8
0.6
0.4
0.2
0
MCP112-475
5.0V
I
DD
(uA)
+125°C
+85°C
-40°C
+25°C
1.7V
1.0V
20
40
60
-40
-20
80
100
120
140
1.0
2.0
3.0
V
DD
(V)
4.0
5.0
6.0
0
Temperature (°C)
FIGURE 2-3:
(MCP112-475).
I
DD
vs. Temperature
FIGURE 2-6:
I
DD
vs. V
DD
(MCP112-475).
©
2005 Microchip Technology Inc.
DS21889D-page 5
Embedded System
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