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MXHSMBJSAC12E3

Description
Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size163KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MXHSMBJSAC12E3 Overview

Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXHSMBJSAC12E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-214AA
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage13.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage12 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
HSMBJSAC5.0 thru HSMBJSAC75, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
The HSMBJSAC t
ransient voltage suppressor (TVS) series rated at 500
APPEARANCE
WWW .
Microsemi
.C
OM
Watts provides an added rectifier element as shown in Figure 4 to achieve
low capacitance in applications for data or signal lines. The low capacitance
rating of less than 30 pF may be used for protecting higher frequency
applications in inductive switching environments or electrical systems
involving secondary lightning effects per IEC61000-4-5 as well as
RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional
protection is needed, two HSMBJSAC devices in anti-parallel configuration
are required as shown in Figure 6. With their very fast response time, they
also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4
respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
DO-214AA
See package notes
FEATURES
Unidirectional low-capacitance TVS series (for
bidirectional see Figure 6)
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
Improved performance in low capacitance of 30 pF
Economical small plastic surface mount with robust axial
subassembly package
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
100% temperature cycle -55
o
C to +125
o
C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
Z
& I
R
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are also available
by adding MQ, MX, or MV prefixes respectively to part
number, e.g. MXHSMBJSAC5.0, MVHSMBJSAC18, etc.
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Also available in axial-leaded packages with part
numbers (SAC5.0 thru SAC50)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select
waveforms in RTCA/DO-160D (see MicroNote 130
for Waveform 4 and 5A capability) & ARINC 429
with bit rates of 100 kb/s (per ARINC 429, Part 1,
par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: HSMBJSAC5.0 to HSMBJSAC75
Class 2: HSMBJSAC5.0 to HSMBJSAC45
Class 3: HSMBJSAC5.0 to HSMBJSAC22
Class 4: HSMBJSAC5.0 to HSMBJSAC10
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance
Class 1: HSMBJSAC5.0 to HSMBJSAC26
Class 2: HSMBJSAC5.0 to HSMBJSAC15
Class 3: HSMBJSAC5.0 to HSMBJSAC7.0
MAXIMUM RATINGS
Peak Pulse Power Dissipation at 25
o
C: 500 Watts @
10/1000
μs
with repetition rate of 0.01% or less*
Steady State Power Dissipation*: 2.5 Watts @ T
L
o
=+75 C
Clamping Speed (0 volts to V
(BR)
Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65
o
C to +150
o
C
o
Solder temperatures: 260 C for 10 s maximum
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting
Plastic package meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Cathode (TVS) Marked with Band
MARKING: Part number without HSMBJ prefix (ie.
SAC5.0, SAC5.0e3, etc)
WEIGHT: 0.1 Grams (Approx.)
See package dimensions on last page
HSMBJSAC5.0 thru
HSMBJSAC75,e3
* TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients
that briefly drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 5 and 6 for further
protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2007
10-20-2007 REV H
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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