2SA1468
Silicon PNP Epitaxial
Application
High voltage amplifier
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SA1468
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–180
–180
–5
–100
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–180
–180
–5
100
—
—
—
—
Typ
—
—
—
—
—
—
200
3.5
Max
—
—
—
320
–0.5
–1.0
—
—
V
V
MHz
pF
Unit
V
V
V
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –0.5 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CE
= –12 V, I
C
= –2 mA*
2
I
C
= –30 mA, I
B
= –3 mA*
2
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
C
= –10 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
V
(BR)EBO
h
FE
*
1
V
CE(sat)
V
BE
f
T
Cob
Notes: 1. The 2SA1468 is grouped by h
FE
as follows.
2. Pulse test
Grade
Mark
h
FE
B
INB
100 to 200
C
INC
160 to 320
2
2SA1468
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
150
–100
Collector Current I
C
(mA)
Typical Output Characteristics
–1
0
–5
=1
.0
0
–2.
–1.0
–0.5
–80
–60
P
C
100
50
mW
–40
–20
I
B
= 0
50
–0.2
–0.1 mA
Ta = 25°C
0
100
150
50
Ambient Temperature Ta (°C)
0
–1.0
–2.0
–3.0
–4.0
–5.0
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
–100
Collector Current I
C
(mA)
V
CE
= –12 V
Ta = 25°C
–30
DC Current Transfer Ratio
vs. Collector Current
1,000
DC Current Transfer Ratio h
FE
V
CE
= –12 V
Pulse
300
Ta = 75°C
25
–25
–10
100
–3
30
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage V
BE
(V)
10
–0.1
–0.3 –1.0
–3
–10
–30
–100
Collector Current I
C
(mA)
3
2SA1468
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
–3.0
I
C
= 10 I
B
Pulse
–1.0
1,000
Gain Bandwidth Product f
T
(MHz)
V
CE
= –12 V
300
Gain Bandwidth Product
vs. Collector Current
–0.3
T
a
= –25°C
–0.1
25
75
–0.03
–0.3
100
30
–1.0
–3
–10
–30 –100 –300
10
–1
–3
–10
–30
–100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
100
I
E
= 0
f = 1 MHz
30
10
3
1
–1
–3
–10
–30
–100
Collector to Base Voltage V
CB
(V)
4
Unit: mm
0.65
0.10
3 – 0.4
+ 0.05
–
0.16
– 0.06
+ 0.10
1.5
±
0.15
+ 0.2
– 0.6
0 – 0.1
0.95
0.95
1.9
±
0.2
2.95
±
0.2
0.3
0.65
1.1
– 0.1
+ 0.2
2.8
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
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