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MMBZ5243B

Description
13 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size196KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MMBZ5243B Overview

13 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

MMBZ5243B Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance13 Ω
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
Certification statusNot Qualified
Nominal reference voltage13 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current9.5 mA
MMBZ5226B - MMBZ5257B Series
MMBZ5226B - MMBZ5257B Series Zeners
Tolerance: B = 5%
Absolute Maximum Ratings*
Parameter
Storage Temperature Range
Maximum Junction Operating Temperature
Total Device Dissipation
Derate above 25°C
TA = 25°C unless otherwise noted
3
Value
-55 to +150
+ 150
350
2.8
Units
°C
°C
mW
mW/°C
1
2
SOT-23
CONNECTION
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DIAGRAM
3
1
2 NC
Electrical Characteristics
Device
Mark
V
Z
(V)
TA = 25°C unless otherwise noted
Z
Z
(Ω)
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
@
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Z
ZK
(Ω)
1,600
1,700
1,900
1,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
600
600
@
I
ZK
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
V
R
(V)
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
@
I
R
(µA)
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
3.3
8A
MMBZ 5226B
3.6
8B
MMBZ 5227B
3.9
8C
MMBZ 5228B
4.3
8D
MMBZ 5229B
4.7
8E
MMBZ 5230B
5.1
8F
MMBZ 5231B
5.6
8G
MMBZ 5232B
6.0
8H
MMBZ 5233B
8J
6.2
MMBZ 5234B
8K
6.8
MMBZ 5235B
8L
7.5
MMBZ 5236B
8M
8.2
MMBZ 5237B
8.7
8N
MMBZ 5238B
9.1
8P
MMBZ 5239B
10
8Q
MMBZ 5240B
11
8R
MMBZ 5241B
12
8S
MMBZ 5242B
V
F
Foward Voltage = 0.9 V Maximum @ I
F
NOTE:
National preferred devices in
BOLD
= 10 mA for all MMBZ 5200 series
2000
Fairchild Semiconductor International
MMBZ5226B-MMBZ5257B Rev A1
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